Precisely Controlled Anodic Etching for Processing of GaAs based Quantum Nanostructures and Devices


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/8505

Title:	Precisely Controlled Anodic Etching for Processing of GaAs based Quantum Nanostructures and Devices
Authors:	Shiozaki, Nanako Browse this author
	Sato, Taketomo Browse this author →KAKEN DB
	Akazawa, Masamichi Browse this author →KAKEN DB
	Hasegawa, Hideki Browse this author
Issue Date:	Mar-2006
Publisher:	EDP Sciences
Journal Title:	Journal de Physique IV
Volume:	132
Start Page:	249
End Page:	253
Publisher DOI:	10.1051/jp4:2006132047
Abstract:	For controlled low-damage etching of AlGaAs/GaAs nanostructures, fundamental properties of an etching process consisting of anodic oxidation and subsequent oxide dissolution are investigated both theoretically and experimentally. Anodic oxides formed on GaAs (001) and (111)B surfaces have the same composition and the same anodization parameters according to XPS, SEM and AFM measurements. The same applies to those formed on Al0.3Ga0.7As (001) and (111)B surfaces. The etching depth can be precisely controlled in nanometer scale by the anodization voltage. Selective etching was realized, using the lithography patterns. The surface morphology is much better than that in the standard wet chemical etching.
Rights:	© EDP Sciences 2006
Type:	article (author version)
URI:	http://hdl.handle.net/2115/8505
Appears in Collections:	量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤威友

OAI-PMH ( junii2 , jpcoar_1.0 )

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