Hokkaido University Collection of Scholarly and Academic Papers >
Showing results 1 to 5 of 5
Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date | article | Asubar, Joel T.; Yatabe, Zenji; Gregusova, Dagmar; Hashizume, Tamotsu | Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation | - | Journal of Applied Physics | - | 28-Mar-2021 |
article | Kaneki, Shota; Ohira, Joji; Toiya, Shota; Yatabe, Zenji; Asubar, Joel T.; Hashizume, Tamotsu | Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates | - | Applied physics letters | - | 18-Oct-2016 |
article (author version) | Yatabe, Zenji; Asubar, Joel T.; Sato, Taketomo; Hashizume, Tamotsu | Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces | - | Physica status solidi A applications and materials science | - | May-2015 |
article (author version) | Yatabe, Zenji; Muramatsu, Toru; Asubar, Joel T.; Kasai, Seiya | Calculating relaxation time distribution function from power spectrum based on inverse integral transformation method | - | Physics Letters A | - | 20-Mar-2015 |
article | Asubar, Joel T.; Yatabe, Zenji; Hashizume, Tamotsu | Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors | - | Applied Physics Letters | - | 4-Aug-2014 |
Showing results 1 to 5 of 5
|