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Hokkaido University Collection of Scholarly and Academic Papers >
Showing results 1 to 6 of 6
| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date | | article | Tomioka, Katsuhiro; Ishizaka, Fumiya; Motohisa, Junichi; Fukui, Takashi | InGaAs-InP core-shell nanowire/Si junction for vertical tunnel field-effect transistor | - | Applied physics letters | - | 21-Sep-2020 |
| article (author version) | Yoshida, Akinobu; Tomioka, Katsuhiro; Ishizaka, Fumiya; Motohisa, Junichi | Growth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy | - | Journal of Crystal Growth | - | 15-Apr-2017 |
| article (author version) | Ishizaka, Fumiya; Hiraya, Yoshihiro; Tomioka, Katsuhiro; Motohisa, Junichi; Fukui, Takashi | Growth and characterization of wurtzite InP/AlGaP core–multishell nanowires with AlGaP quantum well structures | - | Japanese Journal of Applied Physics | - | Jan-2017 |
| article | Yoshida, Akinobu; Tomioka, Katsuhiro; Ishizaka, Fumiya; Chiba, Kohei; Motohisa, Junichi | Selective-Area Growth of Vertical InGaAs Nanowires on Ge for Transistor Applications | - | ECS Transactions | - | Oct-2016 |
| article (author version) | Ishizaka, Fumiya; Hiraya, Yoshihiro; Tomioka, Katsuhiro; Fukui, Takashi | Growth of wurtzite GaP in InP/GaP core-shell nanowires by selective-area MOVPE | - | Journal of crystal growth | - | 1-Feb-2015 |
| article (author version) | Ikejiri, Keitaro; Ishizaka, Fumiya; Tomioka, Katsuhiro; Fukui, Takashi | GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE | - | Nanotechnology | - | 22-Mar-2013 |
Showing results 1 to 6 of 6
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