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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Yoshida, Akinobu; Tomioka, Katsuhiro; Ishizaka, Fumiya; Motohisa, JunichiGrowth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy-Journal of Crystal Growth-15-Apr-2017
article (author version)Ishizaka, Fumiya; Hiraya, Yoshihiro; Tomioka, Katsuhiro; Motohisa, Junichi; Fukui, TakashiGrowth and characterization of wurtzite InP/AlGaP core–multishell nanowires with AlGaP quantum well structures-Japanese Journal of Applied Physics-Jan-2017
articleYoshida, Akinobu; Tomioka, Katsuhiro; Ishizaka, Fumiya; Chiba, Kohei; Motohisa, JunichiSelective-Area Growth of Vertical InGaAs Nanowires on Ge for Transistor Applications-ECS Transactions-Oct-2016
article (author version)Ishizaka, Fumiya; Hiraya, Yoshihiro; Tomioka, Katsuhiro; Fukui, TakashiGrowth of wurtzite GaP in InP/GaP core-shell nanowires by selective-area MOVPE-Journal of crystal growth-1-Feb-2015
article (author version)Ikejiri, Keitaro; Ishizaka, Fumiya; Tomioka, Katsuhiro; Fukui, TakashiGaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE-Nanotechnology-22-Mar-2013
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