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Selective-Area Growth of Vertical InGaAs Nanowires on Ge for Transistor Applications
| Title: | Selective-Area Growth of Vertical InGaAs Nanowires on Ge for Transistor Applications |
| Authors: | Yoshida, Akinobu Browse this author | | Tomioka, Katsuhiro Browse this author →KAKEN DB | | Ishizaka, Fumiya Browse this author | | Chiba, Kohei Browse this author | | Motohisa, Junichi Browse this author →KAKEN DB |
| Issue Date: | Oct-2016 |
| Publisher: | The Electrochemical Society (ECS) |
| Journal Title: | ECS Transactions |
| Volume: | 75 |
| Issue: | 5 |
| Start Page: | 265 |
| End Page: | 270 |
| Publisher DOI: | 10.1149/07505.0265ecst |
| Abstract: | III-V compound semiconductors and Ge are promising future channel materials because of their high carrier mobility. For example the electron mobility of InAs is about 20 times faster than that of Si at room temperature and hole mobility of Ge is about 5 times faster than that of Si. In this paper, we report direct integration of InGaAs nanowires (NWs) on Ge(111) substrate by selective-area metal organic vapor phase epitaxy (SA-MOVPE) for realization of high carrier mobility InGaAs/Ge hybrid CMOS applications, and characterization of the composition and growth modes of InGaAs NWs by X-ray diffraction (XRD) measurement. |
| Rights: | © The Electrochemical Society, Inc. 2016. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Transactions, 75 (5) 265-270 (2016). |
| Type: | article |
| URI: | http://hdl.handle.net/2115/64540 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 冨岡 克広
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