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Hokkaido University Collection of Scholarly and Academic Papers >
Showing results 1 to 6 of 6
| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date | | article | Akazawa, Masamichi; Tamamura, Yuya; Nukariya, Takahide; Kubo, Kouta; Sato, Taketomo; Narita, Tetsuo; Kachi, Tetsu | Detection of defect levels in vicinity of Al₂O₃/p-type GaN interface using sub-bandgap-light-assisted capacitance-voltage method | - | Journal of Applied Physics | - | 16-Nov-2022 |
| article (author version) | Akazawa, Masamichi; Murai, Shunta; Kachi, Tetsu | Encapsulant-Dependent Effects of Long-Term Low-Temperature Annealing on Interstitial Defects in Mg-Ion-Implanted GaN | - | Journal of electronic materials | - | 3-Feb-2022 |
| article (author version) | Akazawa, Masamichi; Wu, Encheng; Sakurai, Hideki; Bockowski, Michal; Narita, Tetsuo; Kachi, Tetsu | X-ray photoelectron spectroscopy study on effects of ultra-high-pressure annealing on surface of Mg-ion-implanted GaN | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Mar-2021 |
| article (author version) | Akazawa, Masamichi; Kamoshida, Ryo; Murai, Shunta; Kachi, Tetsu; Uedono, Akira | Low-temperature annealing behavior of defects in Mg-ion-implanted GaN studied using MOS diodes and monoenergetic positron beam | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Jan-2021 |
| article (author version) | Akazawa, Masamichi; Kamoshida, Ryo; Murai, Shunta; Narita, Tetsuo; Omori, Masato; Suda, Jun; Kachi, Tetsu | Effects of Dosage Increase on Electrical Properties of Metal-Oxide-Semiconductor Diodes with Mg-Ion-Implanted GaN Before Activation Annealing | - | Physica status solidi B-basic solid state physics | - | 6-Feb-2020 |
| article (author version) | Matsumoto, Satoru; Toguchi, Masachika; Takeda, Kentaro; Narita, Tetsuo; Kachi, Tetsu; Sato, Taketomo | Effects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN | - | Japanese Journal of Applied Physics (JJAP) | - | Dec-2018 |
Showing results 1 to 6 of 6
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