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Showing results 1 to 3 of 3
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article
Nishiguchi, Kenya
;
Kaneki, Syota
;
Ozaki, Shiro
;
Hashizume, Tamotsu
Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors
-
Japanese Journal of Applied Physics (JJAP)
-
Oct-2017
theses (doctoral)
Ozaki, Shiro
Interface control of Al2O3-based insulated-gate structures for high-frequency GaN HEMTs
Al2O3絶縁ゲート構造の界面制御と高周波GaN HEMTへの応用
-
-
25-Mar-2019
theses (doctoral - abstract and summary of review)
尾崎,史朗
Interface control of Al2O3-based insulated-gate structures for high-frequency GaN HEMTs [an abstract of dissertation and a summary of dissertation review]
Al2O3絶縁ゲート構造の界面制御と高周波GaN HEMTへの応用 [論文内容及び審査の要旨]
-
-
25-Mar-2019
Showing results 1 to 3 of 3
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