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Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors

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Title: Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors
Authors: Nishiguchi, Kenya Browse this author
Kaneki, Syota Browse this author
Ozaki, Shiro Browse this author
Hashizume, Tamotsu Browse this author →KAKEN DB
Issue Date: Oct-2017
Publisher: IOP Publishing
Journal Title: Japanese Journal of Applied Physics (JJAP)
Volume: 56
Issue: 10
Start Page: 101001-1
End Page: 101001-8
Publisher DOI: 10.7567/JJAP.56.101001
Abstract: To investigate current linearity and operation stability of metal-oxide-semiconductor (MOS) AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated and characterized the Al2O3-gate MOS-HEMTs without and with a bias annealing in air at 300 degrees C. Compared with the as-fabricated (unannealed) MOS HEMTs, the bias-annealed devices showed improved linearity of I-D-V-G curves even in the forward bias regime, resulting in increased maximum drain current. Lower subthreshold slope was also observed after bias annealing. From the precise capacitance-voltage analysis on a MOS diode fabricated on the AlGaN/GaN heterostructure, it was found that the bias annealing effectively reduced the state density at the Al2O3/AlGaN interface. This led to efficient modulation of the AlGaN surface potential close to the conduction band edge, resulting in good gate control of two-dimensional electron gas density even at forward bias. In addition, the bias-annealed MOS HEMTshowed small threshold voltage shift after applying forward bias stress and stable operation even at high temperatures.
Rights: This article is published under a CC BY licence. The Version of Record is available online at 10.7567/JJAP.56.101001.
Type: article
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

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