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Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors
This item is licensed under:Creative Commons Attribution 4.0 International
| Title: | Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors |
| Authors: | Nishiguchi, Kenya Browse this author | | Kaneki, Syota Browse this author | | Ozaki, Shiro Browse this author | | Hashizume, Tamotsu Browse this author →KAKEN DB |
| Issue Date: | Oct-2017 |
| Publisher: | IOP Publishing |
| Journal Title: | Japanese Journal of Applied Physics (JJAP) |
| Volume: | 56 |
| Issue: | 10 |
| Start Page: | 101001-1 |
| End Page: | 101001-8 |
| Publisher DOI: | 10.7567/JJAP.56.101001 |
| Abstract: | To investigate current linearity and operation stability of metal-oxide-semiconductor (MOS) AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated and characterized the Al2O3-gate MOS-HEMTs without and with a bias annealing in air at 300 degrees C. Compared with the as-fabricated (unannealed) MOS HEMTs, the bias-annealed devices showed improved linearity of I-D-V-G curves even in the forward bias regime, resulting in increased maximum drain current. Lower subthreshold slope was also observed after bias annealing. From the precise capacitance-voltage analysis on a MOS diode fabricated on the AlGaN/GaN heterostructure, it was found that the bias annealing effectively reduced the state density at the Al2O3/AlGaN interface. This led to efficient modulation of the AlGaN surface potential close to the conduction band edge, resulting in good gate control of two-dimensional electron gas density even at forward bias. In addition, the bias-annealed MOS HEMTshowed small threshold voltage shift after applying forward bias stress and stable operation even at high temperatures. |
| Rights: | This article is published under a CC BY licence. The Version of Record is available online at 10.7567/JJAP.56.101001. | | https://creativecommons.org/licenses/by/4.0/ |
| Type: | article |
| URI: | http://hdl.handle.net/2115/67316 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 橋詰 保
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