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Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits

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タイトル: Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits
著者: Nakamura, Tatsuya 著作を一覧する
Abe, Yuji 著作を一覧する
Kasai, Seiya 著作を一覧する
Hasegawa, Hideki 著作を一覧する
Hashizume, Tamotsu 著作を一覧する
発行日: 2006年
出版者: Institute of Physics
誌名: Journal of Physics: Conference Series
巻: 38
開始ページ: 104
終了ページ: 107
出版社 DOI: 10.1088/1742-6596/38/1/026
抄録: A new single electron (SE) binary-decision diagram (BDD) node device having a single quantum dot connected to three nanowire branches through tunnel barriers was fabricated using etched AlGaAs/GaAs nanowires and nanometer-sized Schottky wrap gates(WPGs), and their operation was characterized experimentally, for the hexagonal BDD quantum circuit. Fabricated devices showed clear and steep single electron pass switching by applying only an input voltage signal, which was completely different from switching properties in the previous SE BDD node devices composed of two single electron switches. As the possible switching mechanism, the correlation between the probabilities of tunnelling thorough a single quantum dot in exit branches was discussed.
記述: THE SEVENTH INTERNATIONAL CONFERENCE ON NEW PHENOMENA IN MESOSCOPIC STRUCTURES & THE FIFTH INTERNATIONAL CONFERENCE ON SURFACES AND INTERFACES OF MESOSCOPIC DEVICES (27 November--2 December 2005, Maui, Hawaii, USA)
資料タイプ: article (author version)
URI: http://hdl.handle.net/2115/10195
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 葛西 誠也

 

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