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Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/10195

Title: Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits
Authors: Nakamura, Tatsuya Browse this author
Abe, Yuji Browse this author
Kasai, Seiya Browse this author →KAKEN DB
Hasegawa, Hideki Browse this author
Hashizume, Tamotsu Browse this author
Issue Date: 2006
Publisher: Institute of Physics
Journal Title: Journal of Physics: Conference Series
Volume: 38
Start Page: 104
End Page: 107
Publisher DOI: 10.1088/1742-6596/38/1/026
Abstract: A new single electron (SE) binary-decision diagram (BDD) node device having a single quantum dot connected to three nanowire branches through tunnel barriers was fabricated using etched AlGaAs/GaAs nanowires and nanometer-sized Schottky wrap gates(WPGs), and their operation was characterized experimentally, for the hexagonal BDD quantum circuit. Fabricated devices showed clear and steep single electron pass switching by applying only an input voltage signal, which was completely different from switching properties in the previous SE BDD node devices composed of two single electron switches. As the possible switching mechanism, the correlation between the probabilities of tunnelling thorough a single quantum dot in exit branches was discussed.
Description: THE SEVENTH INTERNATIONAL CONFERENCE ON NEW PHENOMENA IN MESOSCOPIC STRUCTURES & THE FIFTH INTERNATIONAL CONFERENCE ON SURFACES AND INTERFACES OF MESOSCOPIC DEVICES (27 November--2 December 2005, Maui, Hawaii, USA)
Type: article (author version)
URI: http://hdl.handle.net/2115/10195
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 葛西 誠也

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