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Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits
| Title: | Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits |
| Authors: | Nakamura, Tatsuya Browse this author | | Abe, Yuji Browse this author | | Kasai, Seiya Browse this author →KAKEN DB | | Hasegawa, Hideki Browse this author | | Hashizume, Tamotsu Browse this author |
| Issue Date: | 2006 |
| Publisher: | Institute of Physics |
| Journal Title: | Journal of Physics: Conference Series |
| Volume: | 38 |
| Start Page: | 104 |
| End Page: | 107 |
| Publisher DOI: | 10.1088/1742-6596/38/1/026 |
| Abstract: | A new single electron (SE) binary-decision diagram (BDD) node device having a single quantum dot connected to three nanowire branches through tunnel barriers was fabricated using etched AlGaAs/GaAs nanowires and nanometer-sized Schottky wrap gates(WPGs), and their operation was characterized experimentally, for the hexagonal BDD quantum circuit. Fabricated devices showed clear and steep single electron pass switching by applying only an input voltage signal, which was completely different from switching properties in the previous SE BDD node devices composed of two single electron switches. As the possible switching mechanism, the correlation between the probabilities of tunnelling thorough a single quantum dot in exit branches was discussed. |
| Description: | THE SEVENTH INTERNATIONAL CONFERENCE ON NEW PHENOMENA IN MESOSCOPIC STRUCTURES & THE FIFTH INTERNATIONAL CONFERENCE ON SURFACES AND INTERFACES OF MESOSCOPIC DEVICES (27 November--2 December 2005, Maui, Hawaii, USA) |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/10195 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 葛西 誠也
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