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Fabrication and characterization of a GaAs-based three-terminal nanowire junction device controlled by double Schottky wrap gates

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Title: Fabrication and characterization of a GaAs-based three-terminal nanowire junction device controlled by double Schottky wrap gates
Authors: Nakamura, Tatsuya Browse this author
Kasai, Seiya Browse this author →KAKEN DB
Shiratori, Yuta Browse this author
Hashizume, Tamotsu Browse this author →KAKEN DB
Issue Date: Mar-2007
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 90
Issue: 10
Start Page: 102104
Publisher DOI: 10.1063/1.2711374
Abstract: A three-terminal nanowire junction device controlled by double nanometer-sized Schottky wrap gates (WPGs), which control left and right branches independently, are fabricated utilizing AlGaAs/GaAs etched nanowires and characterized experimentally. Fabricated device exhibits clear nonlinear characteristics of output voltage at the center terminal by applying voltages to left and right terminals in push-pull fashion. Applying asymmetric gate voltages to left and right WPGs provides clear asymmetry in the output voltage. The nonlinearity in the low voltage regions is greatly enhanced by squeezing both left and right branches using WPGs.
Description: Copyright © 2007 American Institute of Physics
Relation: http://apl.aip.org/apl/top.jsp
Type: article
URI: http://hdl.handle.net/2115/20120
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 葛西 誠也

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