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High quality Fe3-δO4/InAs hybrid structure for electrical spin injection

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Title: High quality Fe3-δO4/InAs hybrid structure for electrical spin injection
Authors: Ferhat, Marhoun Browse this author
Yoh, Kanji Browse this author →KAKEN DB
Issue Date: 12-Mar-2007
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 90
Issue: 11
Start Page: 112501
Publisher DOI: 10.1063/1.2713784
Abstract: Single crystalline Fe3−O4 (00.33) films have been epitaxially grown on InAs (001) substrates by molecular beam epitaxy using O2 as source of active oxygen. Under optimum growth conditions, in situ real time reflection high-energy electron diffraction patterns, along with ex situ atomic force microscopy, indicate that (001) Fe3−O4 can be grown under step-flow-growth mode with a characteristic (×)R45 surface reconstruction. X-ray photoelectron spectroscopy demonstrates the possibility of obtaining iron oxides with compositions ranging from Fe3O4 to -Fe2O3. Measurements with a superconducting quantum interference device magnetometer at 300 K show good magnetic properties, suggesting that iron-based oxides may be promising for spintronic applications. ©2007 American Institute of Physics
Rights: Copyright © 2007 American Institute of Physics
Type: article
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 陽 完治

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