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Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process
| Title: | Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process |
| Authors: | Sato, Taketomo Browse this author | | Kasai, Seiya Browse this author →KAKEN DB | | Okada, Hiroshi Browse this author | | Hasegawa, Hideki Browse this author |
| Keywords: | nanometer-sized Schottky contact | | I-V characteristics | | computer simulation | | electrochemical process | | SEM | | AFM | | conductive probe | | GaAs | | InP |
| Issue Date: | Jul-2000 |
| Publisher: | Japan Society of Applied Physics |
| Journal Title: | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers |
| Volume: | 39 |
| Issue: | 7B |
| Start Page: | 4609 |
| End Page: | 4615 |
| Publisher DOI: | 10.1143/JJAP.39.4609 |
| Abstract: | The current transport characteristics of nanometer-sized Schottky contacts were investigated from theoretical and experimental viewpoints. A theoretical calculation of the three dimensional (3D) potential distributions showed that the potential shape underneath the nano-Schottky contacts was considerably modified by the surface Fermi level pinning on the air exposed free surfaces, producing a saddle point in the potential. The curl ent-voltage (I-V) curves were strongly influenced by this saddle point potential and resulted in nonlinear log I-V characteristics. Experimentally, the Pt nano-particles were selectively formed using the in situ electrochemical process on n-type GaAs and n-type InP substrates patterned using electron-beam (EB) lithography. Their I-V measurements were carried out using an atomic force microscopy (AFM) system equipped with a conductive probe. The log I-V curves of the nano-Schottky contacts showed nonlinear characteristics with large n values of 1.96 for n-GaAs and 1.27 for n-InP and could be very well explained by the theoretical I-V curves considering the "environmental" Fermi level pinning. |
| Rights: | Copyright © 2000 The Japan Society of Applied Physics |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/33092 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 佐藤 威友
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