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Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process

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Title: Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process
Authors: Sato, Taketomo Browse this author
Kasai, Seiya Browse this author →KAKEN DB
Okada, Hiroshi Browse this author
Hasegawa, Hideki Browse this author
Keywords: nanometer-sized Schottky contact
I-V characteristics
computer simulation
electrochemical process
SEM
AFM
conductive probe
GaAs
InP
Issue Date: Jul-2000
Publisher: Japan Society of Applied Physics
Journal Title: Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers
Volume: 39
Issue: 7B
Start Page: 4609
End Page: 4615
Publisher DOI: 10.1143/JJAP.39.4609
Abstract: The current transport characteristics of nanometer-sized Schottky contacts were investigated from theoretical and experimental viewpoints. A theoretical calculation of the three dimensional (3D) potential distributions showed that the potential shape underneath the nano-Schottky contacts was considerably modified by the surface Fermi level pinning on the air exposed free surfaces, producing a saddle point in the potential. The curl ent-voltage (I-V) curves were strongly influenced by this saddle point potential and resulted in nonlinear log I-V characteristics. Experimentally, the Pt nano-particles were selectively formed using the in situ electrochemical process on n-type GaAs and n-type InP substrates patterned using electron-beam (EB) lithography. Their I-V measurements were carried out using an atomic force microscopy (AFM) system equipped with a conductive probe. The log I-V curves of the nano-Schottky contacts showed nonlinear characteristics with large n values of 1.96 for n-GaAs and 1.27 for n-InP and could be very well explained by the theoretical I-V curves considering the "environmental" Fermi level pinning.
Rights: Copyright © 2000 The Japan Society of Applied Physics
Type: article (author version)
URI: http://hdl.handle.net/2115/33092
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤 威友

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