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Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and Dots
Title: | Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and Dots |
Authors: | Hirano, Tetsuro Browse this author | Ito, Akira Browse this author | Sato, Taketomo Browse this author →KAKEN DB | Ishikawa, Fumitaro Browse this author | Hasegawa, Hideki Browse this author |
Keywords: | nanopore | template | porous InP | InGaAs | MBE growth | PL | electrochemical anodization |
Issue Date: | Feb-2002 |
Publisher: | Japan Society of Applied Physics |
Journal Title: | Japanese Journal of Applied Physics part 1, Regular papers & short notes |
Volume: | 41 |
Issue: | 2B |
Start Page: | 977 |
End Page: | 981 |
Publisher DOI: | 10.1143/JJAP.41.977 |
Abstract: | Attempts were made to optimize the parameters of the electrochemical process to form uniform nanopore arrays and utilize them as templates for molecular beam epitaxy (MBE) growth of InP-based quantum wires and quantum dots. Template parameters such as pore depth, diameter and period were strongly dependent on anodization conditions. In particular, in the pulsed anodization mode, the pore depth could be well controlled in the nanometer range by adjusting the number of the applied pulses. InGaAs MBE growth was attempted using the nanopore templates. Growth of InGaAs in pores occurred at a substantial depth of about 20-60 nm. The measured photoluminescence (PL) spectra had a new peak at about 1.2 eV in addition to the PL emission from the InP substrate and that from the InGaAs top layer. The new peak was tentatively assigned to the peak arising from InGaAs quantum wire arrays embedded in InP pores with a possible alloy composition change. |
Rights: | Copyright © 2002 The Japan Society of Applied Physics |
Type: | article (author version) |
URI: | http://hdl.handle.net/2115/33093 |
Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 佐藤 威友
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