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Growth of AlGaN/GaN Quantum Wire Structures by Radio-Frequency-Radical-Assisted Selective Molecular Beam Epitaxy on Prepatterned Substrates

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Title: Growth of AlGaN/GaN Quantum Wire Structures by Radio-Frequency-Radical-Assisted Selective Molecular Beam Epitaxy on Prepatterned Substrates
Authors: Sato, Taketomo Browse this author →KAKEN DB
Oikawa, Takeshi Browse this author
Hasegawa, Hideki Browse this author
Keywords: selective growth
molecular beam epitaxy (MBE)
patterned substrates
GaN
AlGaN
Issue Date: Apr-2005
Publisher: Japan Society of Applied Physics
Journal Title: Japanese Journal of Applied Physics. Pt. 1, Regular papers, brief communications & review papers
Volume: 44
Issue: 4B
Start Page: 2487
End Page: 2491
Publisher DOI: 10.1143/JJAP.44.2487
Abstract: The feasibility of the selective molecular beam epitaxy (MBE) growth of AlGaN/GaN quantum wire (QWR) structures on prepatterned substrates is investigated. The detailed studies on growth features have revealed that size-reducing selective growth is possible on mesa patterns having the <11-20>-orientation, but not on those having the <1-100>-orientations. The behavior reflects complex growth kinetics on high-index crystalline facets. The lateral wire width of QWR structures formed selectively on a top mesa can be controlled by adjusting the growth thickness and the initial size of mesa patterns. From cathodoluminescence (CL) measurements, emission from the embedded AlGaN/GaN QWR structure has been clearly identified.
Rights: Copyright © 2005 The Japan Society of Applied Physics
Type: article (author version)
URI: http://hdl.handle.net/2115/33094
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤 威友

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