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Growth of AlGaN/GaN Quantum Wire Structures by Radio-Frequency-Radical-Assisted Selective Molecular Beam Epitaxy on Prepatterned Substrates
| Title: | Growth of AlGaN/GaN Quantum Wire Structures by Radio-Frequency-Radical-Assisted Selective Molecular Beam Epitaxy on Prepatterned Substrates |
| Authors: | Sato, Taketomo Browse this author →KAKEN DB | | Oikawa, Takeshi Browse this author | | Hasegawa, Hideki Browse this author |
| Keywords: | selective growth | | molecular beam epitaxy (MBE) | | patterned substrates | | GaN | | AlGaN |
| Issue Date: | Apr-2005 |
| Publisher: | Japan Society of Applied Physics |
| Journal Title: | Japanese Journal of Applied Physics. Pt. 1, Regular papers, brief communications & review papers |
| Volume: | 44 |
| Issue: | 4B |
| Start Page: | 2487 |
| End Page: | 2491 |
| Publisher DOI: | 10.1143/JJAP.44.2487 |
| Abstract: | The feasibility of the selective molecular beam epitaxy (MBE) growth of AlGaN/GaN quantum wire (QWR) structures on prepatterned substrates is investigated. The detailed studies on growth features have revealed that size-reducing selective growth is possible on mesa patterns having the <11-20>-orientation, but not on those having the <1-100>-orientations. The behavior reflects complex growth kinetics on high-index crystalline facets. The lateral wire width of QWR structures formed selectively on a top mesa can be controlled by adjusting the growth thickness and the initial size of mesa patterns. From cathodoluminescence (CL) measurements, emission from the embedded AlGaN/GaN QWR structure has been clearly identified. |
| Rights: | Copyright © 2005 The Japan Society of Applied Physics |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/33094 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 佐藤 威友
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