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Determination of spin-orbit coefficients in semiconductor quantum wells
| Title: | Determination of spin-orbit coefficients in semiconductor quantum wells |
| Authors: | Faniel, S. Browse this author | | Matsuura, T. Browse this author | | Mineshige, S. Browse this author | | Sekine, Y. Browse this author | | Koga, T. Browse this author |
| Issue Date: | 15-Mar-2011 |
| Publisher: | American Physical Society |
| Journal Title: | Physical Review B |
| Volume: | 83 |
| Issue: | 11 |
| Start Page: | 115309 |
| Publisher DOI: | 10.1103/PhysRevB.83.115309 |
| Abstract: | We report the determination of the intrinsic spin-orbit interaction (SOI) parameters for In0.53Ga0.47As/In0.52Al0.48As quantum wells (QWs) from the analysis of the weak antilocalization effect. We show that the Dresselhaus SOI is mostly negligible in this system and that the intrinsic parameter for the Rashba effect, a_[SO] ≣ 1 α/< Ez >, is given to be a_[SO]m*/m_[e] = (1.46-1.51 x 10^[-17] N_[S] [m^[-2]]) e Å^[2], where α is the Rashba SOI coefficient, < Ez > is the expected electric field within the QW, m*/m_[e] is the electron effective mass ratio, and N_[S] is the sheet carrier density. These values for a_[SO]m* were also confirmed by the observation of beatings in the Shubnikov-de Haas oscillations in our most asymmetric QW sample. |
| Rights: | ©2011 American Physical Society |
| Type: | article |
| URI: | http://hdl.handle.net/2115/45039 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 古賀 貴亮
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