HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Information Science and Technology / Faculty of Information Science and Technology >
Peer-reviewed Journal Articles, etc >

Determination of spin-orbit coefficients in semiconductor quantum wells

Files in This Item:
PRB83-11_115309.pdf697.26 kBPDFView/Open
Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/45039

Title: Determination of spin-orbit coefficients in semiconductor quantum wells
Authors: Faniel, S. Browse this author
Matsuura, T. Browse this author
Mineshige, S. Browse this author
Sekine, Y. Browse this author
Koga, T. Browse this author
Issue Date: 15-Mar-2011
Publisher: American Physical Society
Journal Title: Physical Review B
Volume: 83
Issue: 11
Start Page: 115309
Publisher DOI: 10.1103/PhysRevB.83.115309
Abstract: We report the determination of the intrinsic spin-orbit interaction (SOI) parameters for In0.53Ga0.47As/In0.52Al0.48As quantum wells (QWs) from the analysis of the weak antilocalization effect. We show that the Dresselhaus SOI is mostly negligible in this system and that the intrinsic parameter for the Rashba effect, a_[SO] ≣ 1 α/< Ez >, is given to be a_[SO]m*/m_[e] = (1.46-1.51 x 10^[-17] N_[S] [m^[-2]]) e Å^[2], where α is the Rashba SOI coefficient, < Ez > is the expected electric field within the QW, m*/m_[e] is the electron effective mass ratio, and N_[S] is the sheet carrier density. These values for a_[SO]m* were also confirmed by the observation of beatings in the Shubnikov-de Haas oscillations in our most asymmetric QW sample.
Rights: ©2011 American Physical Society
Type: article
URI: http://hdl.handle.net/2115/45039
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 古賀 貴亮

Export metadata:

OAI-PMH ( junii2 , jpcoar )

MathJax is now OFF:


 

 - Hokkaido University