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Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance-light intensity measurement

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Title: Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance-light intensity measurement
Authors: Matys, M. Browse this author
Adamowicz, B. Browse this author
Hashizume, T. Browse this author →KAKEN DB
Keywords: aluminium compounds
gallium compounds
III-V semiconductors
interface states
MIS structures
photocapacitance
valence bands
wide band gap semiconductors
Issue Date: 3-Dec-2012
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 101
Issue: 23
Start Page: 231608
Publisher DOI: 10.1063/1.4769815
Abstract: We developed a method for determining of the deep donor-like interface state density distribution D_[it](E) at the insulator/wide bandgap semiconductor interface in metal/insulator/semiconductor structures from the measurements of photocapacitance vs. ultraviolet light intensity C_[L](Φ). From the comparison of theoretical and experimental C_[L](Φ) curves we obtained the continuous donor D_[it](E) in the energy range between 0.15 eV and 1 eV from the valence band top for a metal/Al2O3/n-GaN device. In addition, the acceptor-like interface state D_[it](E) in the upper part of the bandgap was determined from the capacitance-voltage method.
Rights: Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 101, 231608 (2012) and may be found at https://dx.doi.org/10.1063/1.4769815
Type: article
URI: http://hdl.handle.net/2115/51382
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

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