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Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance-light intensity measurement
| Title: | Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance-light intensity measurement |
| Authors: | Matys, M. Browse this author | | Adamowicz, B. Browse this author | | Hashizume, T. Browse this author →KAKEN DB |
| Keywords: | aluminium compounds | | gallium compounds | | III-V semiconductors | | interface states | | MIS structures | | photocapacitance | | valence bands | | wide band gap semiconductors |
| Issue Date: | 3-Dec-2012 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 101 |
| Issue: | 23 |
| Start Page: | 231608 |
| Publisher DOI: | 10.1063/1.4769815 |
| Abstract: | We developed a method for determining of the deep donor-like interface state density distribution D_[it](E) at the insulator/wide bandgap semiconductor interface in metal/insulator/semiconductor structures from the measurements of photocapacitance vs. ultraviolet light intensity C_[L](Φ). From the comparison of theoretical and experimental C_[L](Φ) curves we obtained the continuous donor D_[it](E) in the energy range between 0.15 eV and 1 eV from the valence band top for a metal/Al2O3/n-GaN device. In addition, the acceptor-like interface state D_[it](E) in the upper part of the bandgap was determined from the capacitance-voltage method. |
| Rights: | Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 101, 231608 (2012) and may be found at https://dx.doi.org/10.1063/1.4769815 |
| Type: | article |
| URI: | http://hdl.handle.net/2115/51382 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 橋詰 保
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