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Measurement of interface-state-density distribution near conduction band at interface between atomic-layer-deposited Al2O3 and silicon-doped InAlN

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Title: Measurement of interface-state-density distribution near conduction band at interface between atomic-layer-deposited Al2O3 and silicon-doped InAlN
Authors: Akazawa, Masamichi Browse this author →KAKEN DB
Chiba, Masahito Browse this author
Nakano, Takuma Browse this author
Issue Date: 10-Jun-2013
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 102
Issue: 23
Start Page: 231605-1
End Page: 231605-3
Publisher DOI: 10.1063/1.4810960
Abstract: The Al2O3/InAlN interface formed by atomic layer deposition on a sufficiently thick silicon-doped InAlN layer lattice matched to GaN was investigated electrically. A metal-oxide-semiconductor (MOS) diode fabricated through careful interface formation showed a minimized leakage current and a capacitance-voltage (C-V) characteristic with a capacitance change large enough to evaluate the interface-state density, in the range of 10(12) eV(-1) cm(-2), near the conduction band. However, the MOS diode with careless interface formation resulted in degraded electrical characteristics, which indicated the process dependence of the interface properties. The effects of the acceptor-like interface states on the C-V curves are discussed. (C) 2013 AIP Publishing LLC.
Rights: Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 102, 231605 and may be found at http://apl.aip.org/resource/1/applab/v102/i23/p231605_s1
Type: article
URI: http://hdl.handle.net/2115/53072
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 赤澤 正道

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