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Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy

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Title: Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy
Authors: Noborisaka, Jinichiro Browse this author
Motohisa, Junichi2 Browse this author →KAKEN DB
Fukui, Takashi Browse this author →KAKEN DB
Authors(alt): 本久, 順一2
Issue Date: 23-May-2005
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 86
Issue: 21
Start Page: 213102
Publisher DOI: 10.1063/1.1935038
Abstract: We report on the fabrication of GaAs hexagonal nanowires surrounded by (110) vertical facets on a GaAs (111) B substrate using selective-area (SA) metalorganic vapor-phase epitaxial (MOVPE) growth. The substrate for SA growth was partially covered with thin SiO2, and a circular mask opening with a diameter d0 of 50–200 nm was defined. After SA-MOVPE, GaAs nanowires with a typical diameter d ranging from 50 to 200 nm and a height from 2 to 9 mm were formed vertically on the substrate without any catalysts. The size of the nanowire depends on the growth conditions and the opening size of the masked substrate. A possible growth mechanism is also discussed
Rights: Copyright © 2005 American Institute of Physics
Relation: http://www.aip.org/
Type: article
URI: http://hdl.handle.net/2115/5506
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 本久 順一

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