Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/5506

Title:	Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy
Authors:	Noborisaka, Jinichiro Browse this author
	Motohisa, Junichi² Browse this author →KAKEN DB
	Fukui, Takashi Browse this author →KAKEN DB
Authors(alt):	本久, 順一²
Issue Date:	23-May-2005
Publisher:	American Institute of Physics
Journal Title:	Applied Physics Letters
Volume:	86
Issue:	21
Start Page:	213102
Publisher DOI:	10.1063/1.1935038
Abstract:	We report on the fabrication of GaAs hexagonal nanowires surrounded by (110) vertical facets on a GaAs (111) B substrate using selective-area (SA) metalorganic vapor-phase epitaxial (MOVPE) growth. The substrate for SA growth was partially covered with thin SiO2, and a circular mask opening with a diameter d0 of 50–200 nm was defined. After SA-MOVPE, GaAs nanowires with a typical diameter d ranging from 50 to 200 nm and a height from 2 to 9 mm were formed vertically on the substrate without any catalysts. The size of the nanowire depends on the growth conditions and the opening size of the masked substrate. A possible growth mechanism is also discussed
Rights:	Copyright © 2005 American Institute of Physics
Relation:	http://www.aip.org/
Type:	article
URI:	http://hdl.handle.net/2115/5506
Appears in Collections:	量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 本久順一

OAI-PMH ( junii2 , jpcoar_1.0 )

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