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Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy

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タイトル: Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy
著者: Noborisaka, Jinichiro 著作を一覧する
Motohisa, Junichi 著作を一覧する
Fukui, Takashi 著作を一覧する
発行日: 2005年 5月23日
出版者: American Institute of Physics
誌名: Applied Physics Letters
巻: 86
号: 21
開始ページ: 213102
出版社 DOI: 10.1063/1.1935038
抄録: We report on the fabrication of GaAs hexagonal nanowires surrounded by (110) vertical facets on a GaAs (111) B substrate using selective-area (SA) metalorganic vapor-phase epitaxial (MOVPE) growth. The substrate for SA growth was partially covered with thin SiO2, and a circular mask opening with a diameter d0 of 50–200 nm was defined. After SA-MOVPE, GaAs nanowires with a typical diameter d ranging from 50 to 200 nm and a height from 2 to 9 mm were formed vertically on the substrate without any catalysts. The size of the nanowire depends on the growth conditions and the opening size of the masked substrate. A possible growth mechanism is also discussed
Rights: Copyright © 2005 American Institute of Physics
資料タイプ: article
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 本久 順一


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