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A single electron binary-decision-diagram quantum logic circuit based on Schottky wrap gate control of a GaAs nanowire hexagon
Title: | A single electron binary-decision-diagram quantum logic circuit based on Schottky wrap gate control of a GaAs nanowire hexagon |
Authors: | Kasai, S.1 Browse this author →KAKEN DB | Hasegawa, H. Browse this author |
Authors(alt): | 葛西, 誠也1 |
Issue Date: | Aug-2002 |
Publisher: | IEEE |
Journal Title: | IEEE Electron Device Letters |
Volume: | 23 |
Issue: | 8 |
Start Page: | 446 |
End Page: | 448 |
Publisher DOI: | 10.1109/LED.2002.801291 |
Abstract: | A novel hexagonal binary-decision-diagram (BDD) quantum logic circuit approach for III-V quantum large scale integrated circuits is proposed and its basic feasibility is demonstrated. In this approach, a III-V hexagonal nanowire network is controlled by Schottky wrap gates (WPGs) to implement BDD logic architecture by path switching. A novel single electron BDD OR logic circuit is successfully fabricated on a GaAs nanowire hexagon and correct circuit operation has been confirmed from 1.5 K to 120 K, showing that the WPG BDD circuit can operate over a wide temperature range by trading off between the power-delay product and the operation temperature. |
Rights: | IEEE, Ieee Electron Device Letters, 23, 8, 2002, p446-448 © 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE |
Type: | article |
URI: | http://hdl.handle.net/2115/5532 |
Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 葛西 誠也
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