HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >
量子集積エレクトロニクス研究センター  >
雑誌発表論文等  >

A single electron binary-decision-diagram quantum logic circuit based on Schottky wrap gate control of a GaAs nanowire hexagon

フルテキスト
IEDL23-8.pdf198.91 kBPDF見る/開く
この文献へのリンクには次のURLを使用してください:http://hdl.handle.net/2115/5532

タイトル: A single electron binary-decision-diagram quantum logic circuit based on Schottky wrap gate control of a GaAs nanowire hexagon
著者: Kasai, S. 著作を一覧する
Hasegawa, H. 著作を一覧する
発行日: 2002年 8月
出版者: IEEE
誌名: IEEE Electron Device Letters
巻: 23
号: 8
開始ページ: 446
終了ページ: 448
出版社 DOI: 10.1109/LED.2002.801291
抄録: A novel hexagonal binary-decision-diagram (BDD) quantum logic circuit approach for III-V quantum large scale integrated circuits is proposed and its basic feasibility is demonstrated. In this approach, a III-V hexagonal nanowire network is controlled by Schottky wrap gates (WPGs) to implement BDD logic architecture by path switching. A novel single electron BDD OR logic circuit is successfully fabricated on a GaAs nanowire hexagon and correct circuit operation has been confirmed from 1.5 K to 120 K, showing that the WPG BDD circuit can operate over a wide temperature range by trading off between the power-delay product and the operation temperature.
Rights: IEEE, Ieee Electron Device Letters, 23, 8, 2002, p446-448 © 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE
資料タイプ: article
URI: http://hdl.handle.net/2115/5532
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 葛西 誠也

 

本サイトに関するご意見・お問い合わせは repo at lib.hokudai.ac.jp へお願いします。 - 北海道大学