Study on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0001) substrates

Oikawa, Takeshi; Ishikawa, Fumitaro; Sato, Taketomo; Hashizume, Tamotsu

doi:10.1016/j.apsusc.2004.09.130


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Study on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0001) substrates

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Title:	Study on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0001) substrates
Authors:	Oikawa, Takeshi Browse this author
	Ishikawa, Fumitaro Browse this author
	Sato, Taketomo Browse this author →KAKEN DB
	Hashizume, Tamotsu⁴ Browse this author →KAKEN DB
Authors(alt):	橋詰, 保⁴
Issue Date:	15-May-2005
Publisher:	Elsevier B.V.
Journal Title:	Applied Surface Science
Volume:	244
Issue:	1-4
Start Page:	84
End Page:	87
Publisher DOI:	10.1016/j.apsusc.2004.09.130
Abstract:	This paper attempts to form AlGaN/GaN quantum wire (QWR) network structures on patterned GaN (0 0 0 1) substrates by selective molecular beam epitaxy (MBE) growth. Substrate patterns were prepared along<1120> -<1100> and -directions by electron cyclotron resonance assisted reactive-ion beam etching (ECR-RIBE) process. Selective growth was possible for both directions in the case of GaN growth, but only in the <1120>-direction in the case of AlGaN growth. A hexagonal QWR network was successfully grown on a hexagonal mesa pattern by combining the <1120>-direction and two other equivalent directions. AFM observation confirmed excellent surface morphology of the grown network. A clear cathodoluminescence (CL) peak coming from the embedded AlGaN/GaN QWR structure was clearly identified.
Relation:	http://www.sciencedirect.com/science/journal/01694332
Type:	article (author version)
URI:	http://hdl.handle.net/2115/5595
Appears in Collections:	量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰保

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