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Formation of GaN-Porous Structures Using Photo-Assisted Electrochemical Process in Back-Side Illumination Mode

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Title: Formation of GaN-Porous Structures Using Photo-Assisted Electrochemical Process in Back-Side Illumination Mode
Authors: Watanabe, Akio Browse this author
Kumazaki, Yusuke Browse this author
Yatabe, Zenji Browse this author
Sato, Taketomo Browse this author →KAKEN DB
Keywords: back-side illumination
GaN
porous structure
Issue Date: 14-Mar-2015
Publisher: Electrochemical Society
Journal Title: ECS Electrochemistry Letters
Volume: 4
Issue: 5
Start Page: H11
End Page: H13
Publisher DOI: 10.1149/2.0031505eel
Abstract: We investigated the structural features of gallium-nitride-porous structures formed using the photo-assisted electrochemical process in the back-side illumination (BSI) mode. The pore diameter and depth were strongly affected by the direction of illumination, where higher controllability was achieved compared with front-side illumination. The spectroscopic measurements revealed that illumination with photon energy below the bulk bandgap plays an important role in pore formation. We propose a formation model by considering the Franz-Keldysh effect that can consistently explain the obtained experimental data in which anodic etching occurs only at the pore tips under the high electric field induced in the depletion region.
Rights: © The Electrochemical Society, Inc. 2015. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Electrochemistry Letters.
Type: article
URI: http://hdl.handle.net/2115/58546
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤 威友

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