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Formation of GaN-Porous Structures Using Photo-Assisted Electrochemical Process in Back-Side Illumination Mode
| Title: | Formation of GaN-Porous Structures Using Photo-Assisted Electrochemical Process in Back-Side Illumination Mode |
| Authors: | Watanabe, Akio Browse this author | | Kumazaki, Yusuke Browse this author | | Yatabe, Zenji Browse this author | | Sato, Taketomo Browse this author →KAKEN DB |
| Keywords: | back-side illumination | | GaN | | porous structure |
| Issue Date: | 14-Mar-2015 |
| Publisher: | Electrochemical Society |
| Journal Title: | ECS Electrochemistry Letters |
| Volume: | 4 |
| Issue: | 5 |
| Start Page: | H11 |
| End Page: | H13 |
| Publisher DOI: | 10.1149/2.0031505eel |
| Abstract: | We investigated the structural features of gallium-nitride-porous structures formed using the photo-assisted electrochemical process in the back-side illumination (BSI) mode. The pore diameter and depth were strongly affected by the direction of illumination, where higher controllability was achieved compared with front-side illumination. The spectroscopic measurements revealed that illumination with photon energy below the bulk bandgap plays an important role in pore formation. We propose a formation model by considering the Franz-Keldysh effect that can consistently explain the obtained experimental data in which anodic etching occurs only at the pore tips under the high electric field induced in the depletion region. |
| Rights: | © The Electrochemical Society, Inc. 2015. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Electrochemistry Letters. |
| Type: | article |
| URI: | http://hdl.handle.net/2115/58546 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 佐藤 威友
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