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Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures

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Title: Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures
Authors: Matys, M. Browse this author
Stoklas, R. Browse this author
Kuzmik, J. Browse this author
Adamowicz, B. Browse this author
Yatabe, Z. Browse this author
Hashizume, T. Browse this author →KAKEN DB
Keywords: Interface structure
III-V semiconductors
Issue Date: 31-May-2016
Publisher: American Institute of Physics (AIP)
Journal Title: Journal of Applied Physics
Volume: 119
Issue: 20
Start Page: 205304
Publisher DOI: 10.1063/1.4952708
Abstract: We performed, for the first time, quantitative characterization of electron capture cross sections sigma of the interface states at dielectric/III-N heterojunction interfaces. We developed a new method, which is based on the photo-assisted capacitance-voltage measurements using photon energies below the semiconductor band gap. The analysis was carried out for AlGaN/GaN metal-insulatorsemiconductor heterojunction (MISH) structures with Al2O3, SiO2, or SiN films as insulator deposited on the AlGaN layers with Al content (x) varying over a wide range of values. Additionally, we also investigated an Al2O3/InAlN/GaN MISH structure. Prior to insulator deposition, the AlGaN and InAlN surfaces were subjected to different treatments. We found that sigma for all these structures lies in the range between 5 x 10(-19) and 10(-16) cm(2). Furthermore, we revealed that sigma for dielectric/AlxGa1-xN interfaces increases with increasing x. We showed that both the multiphonon-emission and cascade processes can explain the obtained results. Published by AIP Publishing.
Rights: The following article appeared in J. Appl. Phys. 119, 205304 (2016) and may be found at
Type: article
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

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