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Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures
| Title: | Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures |
| Authors: | Matys, M. Browse this author | | Stoklas, R. Browse this author | | Kuzmik, J. Browse this author | | Adamowicz, B. Browse this author | | Yatabe, Z. Browse this author | | Hashizume, T. Browse this author →KAKEN DB |
| Keywords: | Interface structure | | Heterojunctions | | III-V semiconductors | | Aluminium | | Insulators |
| Issue Date: | 31-May-2016 |
| Publisher: | American Institute of Physics (AIP) |
| Journal Title: | Journal of Applied Physics |
| Volume: | 119 |
| Issue: | 20 |
| Start Page: | 205304 |
| Publisher DOI: | 10.1063/1.4952708 |
| Abstract: | We performed, for the first time, quantitative characterization of electron capture cross sections sigma of the interface states at dielectric/III-N heterojunction interfaces. We developed a new method, which is based on the photo-assisted capacitance-voltage measurements using photon energies below the semiconductor band gap. The analysis was carried out for AlGaN/GaN metal-insulatorsemiconductor heterojunction (MISH) structures with Al2O3, SiO2, or SiN films as insulator deposited on the AlGaN layers with Al content (x) varying over a wide range of values. Additionally, we also investigated an Al2O3/InAlN/GaN MISH structure. Prior to insulator deposition, the AlGaN and InAlN surfaces were subjected to different treatments. We found that sigma for all these structures lies in the range between 5 x 10(-19) and 10(-16) cm(2). Furthermore, we revealed that sigma for dielectric/AlxGa1-xN interfaces increases with increasing x. We showed that both the multiphonon-emission and cascade processes can explain the obtained results. Published by AIP Publishing. |
| Rights: | The following article appeared in J. Appl. Phys. 119, 205304 (2016) and may be found at http://dx.doi.org/10.1063/1.4952708. |
| Type: | article |
| URI: | http://hdl.handle.net/2115/65858 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 橋詰 保
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