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Detection of deep-level defects and reduced carrier concentration in Mg-ion-implanted GaN before high-temperature annealing
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| Title: | Detection of deep-level defects and reduced carrier concentration in Mg-ion-implanted GaN before high-temperature annealing |
| Authors: | Akazawa, Masamichi Browse this author →KAKEN DB | | Yokota, Naoshige Browse this author | | Uetake, Kei Browse this author |
| Issue Date: | Feb-2018 |
| Publisher: | American Institute of Physics (AIP) |
| Journal Title: | AIP Advances |
| Volume: | 8 |
| Issue: | 2 |
| Start Page: | 025310 |
| Publisher DOI: | 10.1063/1.5017891 |
| Abstract: | We report experimental results for the detection of deep-level defects in GaN after Mg ion implantation before high-temperature annealing. The n-type GaN samples were grown on GaN free-standing substrates by metalorganic vapor phase epitaxy. Mg ions were implanted at 50 keV with a small dosage of 1.5 x 10(11) cm(-2), which did not change the conduction type of the n-GaN. By depositing Al2O3 and a Ni/Au electrode onto the implanted n-GaN, metal-oxide-semiconductor (MOS) diodes were fabricated and tested. The measured capacitance-voltage (C-V) characteristics showed a particular behavior with a plateau region and a region with an anomalously steep slope. Fitting to the experimental C-V curves by simulation showed the existence of deep-level defects and a reduction of the carrier concentration near the GaN surface. By annealing at 800 degrees C, the density of the deep-level defects was reduced and the carrier concentration partially recovered. (C) 2018 Author(s). |
| Rights: | https://creativecommons.org/licenses/by/4.0/ |
| Type: | article |
| URI: | http://hdl.handle.net/2115/68855 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 赤澤 正道
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