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Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process
| Title: | Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process |
| Authors: | Kumazaki, Yusuke Browse this author | | Uemura, Keisuke Browse this author | | Sato, Taketomo Browse this author →KAKEN DB | | Hashizume, Tamotsu Browse this author →KAKEN DB |
| Issue Date: | 14-May-2017 |
| Publisher: | American Institute of Physics (AIP) |
| Journal Title: | Journal of Applied Physics |
| Volume: | 121 |
| Issue: | 18 |
| Start Page: | 184501 |
| Publisher DOI: | 10.1063/1.4983013 |
| Abstract: | The photocarrier-regulated electrochemical (PREC) process was developed for fabricating recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for normally off operation. The PREC process is based on photo-assisted electrochemical etching using low-energy chemical reactions. The fundamental photo-electrochemical measurements on AlGaN/GaN heterostructures revealed that the photo-carriers generated in the top AlGaN layer caused homogeneous etching of AlGaN with a smooth surface, but those generated in the GaN layer underneath caused inhomogeneous etching that roughens the surface. The concept of the PREC process is to supply the photo-carriers generated only in the AlGaN layer by selecting proper conditions on light wavelength and voltage. The phenomenon of self-termination etching has been observed during the PREC process, where the etching depth was controlled by light intensity. The recessed-gate AlGaN/GaN HEMT fabricated with the PREC process showed positive threshold voltage and improvement in transconductance compared to planar-gate AlGaN/GaN HEMTs. |
| Rights: | The following article appeared in Journal of Applied Physics 121, 184501 (2017) and may be found at http://aip.scitation.org/doi/10.1063/1.4983013. |
| Type: | article |
| URI: | http://hdl.handle.net/2115/70195 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 佐藤 威友
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