HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >
Research Center for Integrated Quantum Electronics >
Peer-reviewed Journal Articles, etc >

Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process

Files in This Item:
1%2E4983013.pdf1.98 MBPDFView/Open
Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/70195

Title: Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process
Authors: Kumazaki, Yusuke Browse this author
Uemura, Keisuke Browse this author
Sato, Taketomo Browse this author →KAKEN DB
Hashizume, Tamotsu Browse this author →KAKEN DB
Issue Date: 14-May-2017
Publisher: American Institute of Physics (AIP)
Journal Title: Journal of Applied Physics
Volume: 121
Issue: 18
Start Page: 184501
Publisher DOI: 10.1063/1.4983013
Abstract: The photocarrier-regulated electrochemical (PREC) process was developed for fabricating recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for normally off operation. The PREC process is based on photo-assisted electrochemical etching using low-energy chemical reactions. The fundamental photo-electrochemical measurements on AlGaN/GaN heterostructures revealed that the photo-carriers generated in the top AlGaN layer caused homogeneous etching of AlGaN with a smooth surface, but those generated in the GaN layer underneath caused inhomogeneous etching that roughens the surface. The concept of the PREC process is to supply the photo-carriers generated only in the AlGaN layer by selecting proper conditions on light wavelength and voltage. The phenomenon of self-termination etching has been observed during the PREC process, where the etching depth was controlled by light intensity. The recessed-gate AlGaN/GaN HEMT fabricated with the PREC process showed positive threshold voltage and improvement in transconductance compared to planar-gate AlGaN/GaN HEMTs.
Rights: The following article appeared in Journal of Applied Physics 121, 184501 (2017) and may be found at http://aip.scitation.org/doi/10.1063/1.4983013.
Type: article
URI: http://hdl.handle.net/2115/70195
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤 威友

Export metadata:

OAI-PMH ( junii2 , jpcoar )

MathJax is now OFF:


 

 - Hokkaido University