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Reduction of interface state density at SiO2/InAlN interface by inserting ultrathin Al2O3 and plasma oxide interlayers
| Title: | Reduction of interface state density at SiO2/InAlN interface by inserting ultrathin Al2O3 and plasma oxide interlayers |
| Authors: | Akazawa, Masamichi Browse this author →KAKEN DB | | Seino, Atsushi Browse this author |
| Keywords: | InAlN | | interface states | | plasma-enhanced chemical vapor deposition | | SiO | | X-ray photoelectron spectroscopy |
| Issue Date: | Aug-2017 |
| Publisher: | Wiley-Blackwell |
| Journal Title: | Physica status solidi B-basic solid state physics |
| Volume: | 254 |
| Issue: | 8 |
| Start Page: | 1600691 |
| Publisher DOI: | 10.1002/pssb.201600691 |
| Abstract: | SiO2/InAlN interfaces formed by plasma-enhanced chemical vapor deposition were investigated. X-ray photoelectron spectroscopy showed that the direct deposition of SiO2 onto an InAlN surface led to the oxidation of the InAlN surface. The interface state density, D-it, was on the order of 10(12) cm(-2) eV(-1) (5 x 10(12) cm(-2) eV(-1) at 0.3 eV from the conduction band edge, E-c), which indicated the possibility of improving the interface properties. Reduction of the interface state density was attempted using an Al2O3 interlayer and a plasma oxide interlayer. The insertion of a 2-nm-thick Al2O3 interlayer to prevent surface oxidation by plasma reduced D-it slightly. A marked reduction in D-it to less than 10(11) cm(-2) eV(-1) deeper than 0.3 eV from E-c, however, was achieved by the intentional formation of a 1-nm-thick plasma oxide layer, formed by N2O plasma oxidation, as an interlayer between SiO2 and InAlN. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
| Rights: | This is the peer reviewed version of the following article: Physica status solidi (b), Volume 254, Issue 8, August 2017, 1600691, which has been published in final form at http://dx.doi.org/10.1002/pssb.201600691. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving. |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/71219 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 赤澤 正道
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