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Effects of postmetallization annealing on interface properties of Al2O3/GaN structures

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Title: Effects of postmetallization annealing on interface properties of Al2O3/GaN structures
Authors: Hashizume, Tamotsu Browse this author →KAKEN DB
Kaneki, Shota Browse this author
Oyobiki, Tatsuya Browse this author
Ando, Yuji Browse this author
Sasaki, Shota Browse this author
Nishiguchi, Kenya Browse this author
Issue Date: Dec-2018
Publisher: IOP Publishing
Journal Title: Applied Physics Express (APEX)
Volume: 11
Issue: 12
Start Page: 124102
Publisher DOI: 10.7567/APEX.11.124102
Abstract: In this study, we investigated the effects of postmetallization annealing (PMA) on the interface properties of GaN metal-oxide-semiconductor (MOS) structures using Al2O3 prepared by atomic layer deposition. Excellent capacitance-voltage (C-V) characteristics without frequency dispersion were observed in the MOS sample after PMA in N-2 ambient at 300-400 degrees C. The PMA sample showed state densities of only at most 4 x 10(10) cm(-1) eV(-1). A geometric phase analysis of transmission electron microscopy images after PMA revealed a uniform distribution of the lattice constant near the Al2O3/GaN interface, leading to the improved bond termination and bonding order configuration along the interface. (C) 2018 The Japan Society of Applied Physics
Rights: ©2018 The Japan Society of Applied Physics
Type: article
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

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