Effects of postmetallization annealing on interface properties of Al2O3/GaN structures

Hashizume, Tamotsu; Kaneki, Shota; Oyobiki, Tatsuya; Ando, Yuji; Sasaki, Shota; Nishiguchi, Kenya

doi:10.7567/APEX.11.124102


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Effects of postmetallization annealing on interface properties of Al2O3/GaN structures

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/72143

Title:	Effects of postmetallization annealing on interface properties of Al2O3/GaN structures
Authors:	Hashizume, Tamotsu Browse this author →KAKEN DB
	Kaneki, Shota Browse this author
	Oyobiki, Tatsuya Browse this author
	Ando, Yuji Browse this author
	Sasaki, Shota Browse this author
	Nishiguchi, Kenya Browse this author
Issue Date:	Dec-2018
Publisher:	IOP Publishing
Journal Title:	Applied Physics Express (APEX)
Volume:	11
Issue:	12
Start Page:	124102
Publisher DOI:	10.7567/APEX.11.124102
Abstract:	In this study, we investigated the effects of postmetallization annealing (PMA) on the interface properties of GaN metal-oxide-semiconductor (MOS) structures using Al2O3 prepared by atomic layer deposition. Excellent capacitance-voltage (C-V) characteristics without frequency dispersion were observed in the MOS sample after PMA in N-2 ambient at 300-400 degrees C. The PMA sample showed state densities of only at most 4 x 10(10) cm(-1) eV(-1). A geometric phase analysis of transmission electron microscopy images after PMA revealed a uniform distribution of the lattice constant near the Al2O3/GaN interface, leading to the improved bond termination and bonding order configuration along the interface. (C) 2018 The Japan Society of Applied Physics
Rights:	©2018 The Japan Society of Applied Physics
Rights:	https://creativecommons.org/licenses/by/4.0/
Type:	article
URI:	http://hdl.handle.net/2115/72143
Appears in Collections:	量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰保

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