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Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions

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Title: Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions
Authors: Sato, Taketomo Browse this author →KAKEN DB
Toguchi, Masachika Browse this author
Komatsu, Yuto Browse this author
Uemura, Keisuke Browse this author
Keywords: Etching
Aluminum gallium nitride
Wide band gap semiconductors
GaN heterostructures
low damage etching
photo-electrochemical reactions
Issue Date: Nov-2019
Publisher: IEEE
Institute of Electrical and Electronics Engineers
Journal Title: IEEE transactions on semiconductor manufacturing
Volume: 32
Issue: 4
Start Page: 483
End Page: 488
Publisher DOI: 10.1109/TSM.2019.2934727
Abstract: This paper describes our recent efforts to optimize photo-electrochemical (PEC) etching for fabricating recessed-gate aluminum gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs). Selecting the proper light wavelength and voltage conditions enabled PEC etching on AlGaN/GaN heterostructures to produce smooth and flat surfaces. Self-termination phenomena observed under optimal PEC condition were useful for precisely controlling the etching depth in the AlGaN layer. Two types of HEMTs, i.e., Schottky-gate and metal-insulator-semiconductor (MIS)-gate, were fabricated. A recessed-gate AlGaN/GaN structure fabricated with PEC etching showed positive threshold voltage, and its variation was very small with a standard deviation of only 0.019 V for the Schottky-gate HEMTs and 0.032 V for the MIS-gate HEMTs. A recessed-gate structure with PEC etching showed better current transport controllability with a small subthreshold-slope than that of planar-gate and dry-etched-gate AlGaN/GaN structures.
Rights: © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Type: article (author version)
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤 威友

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