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III-V Quantum Devices and Circuits Based on Nano-scale Schottky Gate Control of Hexagonal Quantum Wire Networks
| Title: | III-V Quantum Devices and Circuits Based on Nano-scale Schottky Gate Control of Hexagonal Quantum Wire Networks |
| Authors: | Kasai, Seiya Browse this author →KAKEN DB | | Hasegawa, Hideki Browse this author |
| Keywords: | Quantum device | | Nano-Schottky gate | | Hexagonal nanowire network | | GaAs | | InGaAs | | Logic circuit |
| Issue Date: | 8-May-2002 |
| Publisher: | Elsevier |
| Journal Title: | Applied Surface Science |
| Volume: | 190 |
| Issue: | 1-4 |
| Start Page: | 176 |
| End Page: | 183 |
| Publisher DOI: | 10.1016/S0169-4332(01)00887-X |
| Abstract: | The concept, the present status, key issues and future prospects of a novel hexagonal binary decision diagram (BDD) quantum circuit approach for III-V quantum large scale integrated circuits (QLSIs) are presented and discussed. In this approach, the BDD logic circuits are implemented on III-V semiconductor-based hexagonal nanowire networks controlled by nano-scale Schottky gates. The hexagonal BDD QLSIs can operate at delay-power products near the quantum limit in the quantum regime as well as in the many-electron classical regime. To demonstrate the feasibility of the present approach, GaAs Schottky wrap gate (WPG)-based single electron BDD node devices and their integrated circuits were fabricated and their proper operations were confirmed. Selectively grown InGaAs sub-10 nm quantum wires and their hexagonal networks have been investigated to form high-density hexagonal BDD QLSIs operating in the quantum regime at room temperature. |
| Relation: | http://www.sciencedirect.com/science/journal/01694332 |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/8361 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 葛西 誠也
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