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Hexagonal Binary Decision Diagram Quantum Logic Circuits Using Schottky In-Plane and Wrap Gate Control of GaAs and InGaAs Nanowires

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Title: Hexagonal Binary Decision Diagram Quantum Logic Circuits Using Schottky In-Plane and Wrap Gate Control of GaAs and InGaAs Nanowires
Authors: Hasegawa, Hideki Browse this author
Kasai, Seiya Browse this author →KAKEN DB
Keywords: binary decision diagram (BDD)
quantum wire transistor
III-V semiconductor
Schottky in-plane gate
Schottky wrap gate
Issue Date: Oct-2001
Publisher: Elsevier
Journal Title: Physica E: Low-dimensional Systems and Nanostructures
Volume: 11
Issue: 2-3
Start Page: 149
End Page: 154
Publisher DOI: 10.1016/S1386-9477(01)00193-X
Abstract: Previous quantum device research has been done on discrete device levels and lacks a clear vision for high density integration. This paper proposes a new, simple and realistic approach for quantum large scale integrated circuits (QLSIs) where a binary-decision diagram (BDD) logic architecture is implemented by BDD node devices based on quantum wire transistors (QWTrs) and single electron transistors (SETs) realized by the Schottky in-plane gate (IPG) and wrap-gate (WPG) control of III-V hexagonal nanowire networks. To investigate the feasibility of the proposed approach, BDD devices having QWTrs were formed on GaAs/AlGaAs etched nanowire patterns. They showed expected complimentary quantized conductance switching as required to achieve operation at delay-power products near the quantum limit. Use of embedded InGaAs honeycomb wire networks grown by selective MBE on InP substrates is proposed for constructing circuits operating in quantum regime at room temperature.
Relation: http://www.sciencedirect.com/science/journal/13869477
Type: article (author version)
URI: http://hdl.handle.net/2115/8363
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 葛西 誠也

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