Conductance Oscillation Characteristics of GaAs Schottky Wrap-Gate Single Electron Transistors

Kasai, Seiya; Satoh, Yoshihiro; Hasegawa, Hideki

doi:10.1016/S0921-4526(99)00373-7


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Conductance Oscillation Characteristics of GaAs Schottky Wrap-Gate Single Electron Transistors

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/8364

Title:	Conductance Oscillation Characteristics of GaAs Schottky Wrap-Gate Single Electron Transistors
Authors:	Kasai, Seiya Browse this author
	Satoh, Yoshihiro Browse this author
	Hasegawa, Hideki Browse this author
Keywords:	single electron transistor (SET)
	Schottky wrap gate (WPG)
	GaAs
	conductance oscillation
Issue Date:	1-Dec-1999
Publisher:	Elsevier
Journal Title:	Physica B: Condensed Matter
Volume:	272
Issue:	1-4
Start Page:	88
End Page:	91
Publisher DOI:	10.1016/S0921-4526(99)00373-7
Abstract:	Conductance oscillation characteristics in GaAs-based Schottky wrap gate (WPG) single electron transistors (SETs) were investigated both experimentally and theoretically in view of application as a key switching device in future quantum integrated circuits. Fabricated WPG SETs showed that clear conductance oscillation characteristics with a small number of high conductance peaks. A simple theory based on a quantum mechanical treatment reproduced qualitatively the features of the experimentally observed conductance peaks, indicating that the resonant tunneling contributes to currents in the WPG SETs. However, quantitatively, a discrepancy existed between theory and experiment on the temperature dependence of peak heights.
Relation:	http://www.sciencedirect.com/science/journal/09214526
Type:	article (author version)
URI:	http://hdl.handle.net/2115/8364
Appears in Collections:	量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 葛西誠也

OAI-PMH ( junii2 , jpcoar_1.0 )

- Hokkaido University