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Conductance Oscillation Characteristics of GaAs Schottky Wrap-Gate Single Electron Transistors

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/8364

Title: Conductance Oscillation Characteristics of GaAs Schottky Wrap-Gate Single Electron Transistors
Authors: Kasai, Seiya Browse this author
Satoh, Yoshihiro Browse this author
Hasegawa, Hideki Browse this author
Keywords: single electron transistor (SET)
Schottky wrap gate (WPG)
GaAs
conductance oscillation
Issue Date: 1-Dec-1999
Publisher: Elsevier
Journal Title: Physica B: Condensed Matter
Volume: 272
Issue: 1-4
Start Page: 88
End Page: 91
Publisher DOI: 10.1016/S0921-4526(99)00373-7
Abstract: Conductance oscillation characteristics in GaAs-based Schottky wrap gate (WPG) single electron transistors (SETs) were investigated both experimentally and theoretically in view of application as a key switching device in future quantum integrated circuits. Fabricated WPG SETs showed that clear conductance oscillation characteristics with a small number of high conductance peaks. A simple theory based on a quantum mechanical treatment reproduced qualitatively the features of the experimentally observed conductance peaks, indicating that the resonant tunneling contributes to currents in the WPG SETs. However, quantitatively, a discrepancy existed between theory and experiment on the temperature dependence of peak heights.
Relation: http://www.sciencedirect.com/science/journal/09214526
Type: article (author version)
URI: http://hdl.handle.net/2115/8364
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 葛西 誠也

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