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Showing results 1 to 8 of 8
TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Yatabe, Zenji; Muramatsu, Toru; Asubar, Joel T.; Kasai, SeiyaCalculating relaxation time distribution function from power spectrum based on inverse integral transformation method-Physics Letters A-20-Mar-2015
article (author version)Kasai, Seiya; Satoh, Yoshihiro; Hasegawa, HidekiConductance Oscillation Characteristics of GaAs Schottky Wrap-Gate Single Electron Transistors-Physica B: Condensed Matter-1-Dec-1999
theses (doctoral)Kasai, SeiyaControl of Metal/III-V Compound Semiconductor Interfaces and Its Application to Quantum Effect Devices---25-Mar-1997
proceedings (author version)Kasai, Seiya; Amemiya, Yoshihito; Hasegawa, HidekiGaAs Schottky Wrap-Gate Binary-Decision-Diagram Devices for Realization of Novel Single Electron Logic Architecture---2000
conference presentationKasai, SeiyaNovel Quantum Nanodevice-based Logic Circuits Utilizing Semiconductor Nanowire Networks and Hexagonal BDD Architecture---17-May-2006
article (author version)Fu, Zhengwen; Takahashi, Hiroshi; Kasai, Seiya; Hasegawa, HidekiOptimization and Interface Characterization of a Novel Oxide-Free Insulated Gate Structure for InP Having an Ultrathin Silicon Interface Control Layer-Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers-Feb-2002
bookchapter (author version)Yumoto, Miki; Kasai, Seiya; Hasegawa, HidekiSpeed-Power Performances of Quantum Wire Switches Controlled by Nanometer-Scale Schottky Wrap Gates for GaAs based Hexagonal BDD Quantum LSIs---15-Jun-2005
articleKasai, Seiya; Miura, Kensuke; Shiratori, YutaThreshold-variation-enhanced adaptability of response in a nanowire field-effect transistor network-Applied Physics Letters-10-May-2010
Showing results 1 to 8 of 8

 

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