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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Kasai, Seiya; Nakamura, Tatsuya; Rahmani, Shaharin Fadzli Bin Abd; Shiratori, YutaStudy on Nonlinear Electrical Characteristics of GaAs-Based Three-Branch Nanowire Junctions Controlled by Schottky Wrap Gates-Japanese Journal of Applied Physics-25-Jun-2008
articleKasai, Seiya; Nakamura, Tatsuya; Shiratori, YutaMultipath-switching device utilizing a GaAs-based multiterminal nanowire junction with size-controlled dual Schottky wrap gates-Applied Physics Letters-14-May-2007
articleNakamura, Tatsuya; Kasai, Seiya; Shiratori, Yuta; Hashizume, TamotsuFabrication and characterization of a GaAs-based three-terminal nanowire junction device controlled by double Schottky wrap gates-Applied Physics Letters-Mar-2007
article (author version)Kasai, Seiya; Nakamura, Tatsuya; Shiratori, YutaMultiple Path Switching Device Utilizing Size-Controlled Nano-Schottky Wrap Gates for MDD-Based Logic Circuits-Journal of Multiple-Valued Logic and Soft Computing-2007
article (author version)Nakamura, Tatsuya; Abe, Yuji; Kasai, Seiya; Hasegawa, Hideki; Hashizume, TamotsuProperties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits-Journal of Physics: Conference Series-2006
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