Hokkaido University Collection of Scholarly and Academic Papers >
Showing results 1 to 4 of 4
Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date | article | Nishiguchi, Kenya; Kaneki, Syota; Ozaki, Shiro; Hashizume, Tamotsu | Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors | - | Japanese Journal of Applied Physics (JJAP) | - | Oct-2017 |
article (author version) | Ohi, Kota; Asubar, Joel Tacla; Nishiguchi, Kenya; Hashizume, Tamotsu | Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs | - | IEEE Transactions on Electron Devices | - | Oct-2013 |
article | Hashizume, Tamotsu; Kaneki, Shota; Oyobiki, Tatsuya; Ando, Yuji; Sasaki, Shota; Nishiguchi, Kenya | Effects of postmetallization annealing on interface properties of Al2O3/GaN structures | - | Applied Physics Express (APEX) | - | Dec-2018 |
article | Hashizume, Tamotsu; Nishiguchi, Kenya; Kaneki, Shota; Kuzmik, Jan; Yatabe, Zenji | State of the art on gate insulation and surface passivation for GaN-based power HEMTs | - | Materials science in semiconductor processing | - | May-2018 |
Showing results 1 to 4 of 4
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