Hokkaido University Collection of Scholarly and Academic Papers >
Showing results 1 to 5 of 5
Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date | article | Hashizume, Tamotsu; Ootomo, Shinya; Oyama, Susumu; Konishi, Masanobu; Hasegawa, Hideki | Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | Jul-2001 |
article | Hasegawa, Hideki; Inagaki, Takanori; Ootomo, Shinya; Hashizume, Tamotsu | Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | 5-Aug-2003 |
article (author version) | Kimura, Takeshi; Ootomo, Shinya; Nomura, Takehiko; Yoshida, Seikoh; Hashizume, Tamotsu | Solid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure | - | Japanese Journal of Applied Physics. Pt. 2, Letters & express letters | - | Mar-2007 |
article | Hashizume, Tamotsu; Ootomo, Shinya; Hasegawa, Hideki | Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric | - | Applied Physics Letters | - | 6-Oct-2003 |
article | Hashizume, Tamotsu; Ootomo, Shinya; Inagaki, Takanori; Hasegawa, Hideki | Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | 5-Aug-2003 |
Showing results 1 to 5 of 5
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