|
Hokkaido University Collection of Scholarly and Academic Papers >
Research Center for Integrated Quantum Electronics >
Peer-reviewed Journal Articles, etc >
Studies on atomic layer deposition Al2O3/In0.53Ga0.47As interface formation mechanism based on air-gap capacitance-voltage method
| Title: | Studies on atomic layer deposition Al2O3/In0.53Ga0.47As interface formation mechanism based on air-gap capacitance-voltage method |
| Authors: | Yoshida, Toshiyuki Browse this author | | Hashizume, Tamotsu Browse this author →KAKEN DB |
| Keywords: | air gaps | | alumina | | annealing | | atomic layer deposition | | capacitance | | electronic density of states | | gallium arsenide | | III-V semiconductors | | indium compounds | | interface states | | oxidation | | semiconductor-insulator boundaries |
| Issue Date: | 17-Sep-2012 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 101 |
| Issue: | 12 |
| Start Page: | 122102 |
| Publisher DOI: | 10.1063/1.4753927 |
| Abstract: | The air-gap capacitance-voltage characteristics of InGaAs surfaces were measured after 1-, 2-, 6-, 9-, and 17-cycle atomic layer deposition (ALD) Al2O3 processing. A high density of mid-gap states was found to be generated and increased during these ALD process steps, while the native oxide component was reduced. On the other hand, the mid-gap state density was drastically reduced after the usual annealing process. The generation of the mid-gap states seemed to be relevant to a non-stoichiometric Al-oxide component associated with a deficit in oxygen atoms, which became re-oxidized during the annealing process. |
| Rights: | Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 101, 122102 (2012) and may be found at https://dx.doi.org/10.1063/1.4753927 |
| Type: | article |
| URI: | http://hdl.handle.net/2115/50404 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
|
Submitter: 橋詰 保
|
