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Fabrication of one-dimensional GaAs channel-coupled InAs quantum dot memory device by selective-area metal-organic vapor phase epitaxy
| Title: | Fabrication of one-dimensional GaAs channel-coupled InAs quantum dot memory device by selective-area metal-organic vapor phase epitaxy |
| Authors: | Nataraj, Devaraj Browse this author | | Ooike, Noboru Browse this author | | Motohisa, Junichi3 Browse this author →KAKEN DB | | Fukui, Takashi Browse this author |
| Authors(alt): | 本久, 順一3 |
| Issue Date: | 7-Nov-2005 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 87 |
| Start Page: | 19310 |
| Publisher DOI: | 10.1063/1.2120905 |
| Abstract: | Narrow wirelike openings were defined on SiO2-masked GaAs (001) substrates by electron-beam lithography and wet chemical etching methods. A one-dimensional GaAs channel-coupled InAs quantum dot memory device was fabricated in this opened area by the selective-area metal-organic vapor phase epitaxy. Drain current measurement by sweeping the gate voltage forward and backward showed clear hysteresis up to 180 K due to electrons charging into the quantum dots with a threshold voltage difference (△Vth) of 165 mV at 20 K and 29 mV at 180 K. Comparison of experimental △Vth values with the theoretically calculated ones showed that around 300 and 50 electrons were responsible for the memory operation at 20 and 180 K, respectively. Real time measurements showed that the write/erase states of the memory device were discriminated for more than 5 min at 20 K and about 100 s at 77 K. |
| Rights: | Copyright © 2005 American Institute of Physics |
| Type: | article |
| URI: | http://hdl.handle.net/2115/5504 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 本久 順一
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