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Hokkaido University Collection of Scholarly and Academic Papers >

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Showing results 1 to 6 of 6
TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Kim, Gowoon; Feng, Bin; Sheu, Yu-Miin; Cho, Hai Jun; Ikuhara, Yuichi; Ohta, HiromichiCoexistence of High Electron Conduction and Low Heat Conduction in Tungsten Oxide Epitaxial Films with 1D Atomic Defect Tunnels-ACS Applied Electronic Materials-25-Aug-2020
article (author version)Yang, Qian; Lee, Joonhyuk; Feng, Bin; Ikuhara, Yuichi; Kim, Gowoon; Cho, Hai Jun; Jeen, Hyoungjeen; Ohta, HiromichiUnusually Large Thermopower Change from +330 to -185 mu V K-1 of Brownmillerite SrCoO2.5-ACS Applied Electronic Materials-28-Jul-2020
articleCho, Hai Jun; Sato, Koichi; Wei, Mian; Kim, Gowoon; Ohta, HiromichiEffect of lattice distortions on the electron and thermal transport properties of transparent oxide semiconductor Ba1-xSrxSnO3 solid solution films-Journal of Applied Physics-21-Mar-2020
article (author version)Cho, Hai Jun; Kim, Gowoon; Onozato, Takaki; Jeen, Hyoungjeen; Ohta, HiromichiThermal conductivity tensor of NbO2-International journal of heat and mass transfer-Jul-2019
article (author version)Sanchela, Anup V.; Wei, Mian; Lee, Joonhyuk; Kim, Gowoon; Jeen, Hyoungjeen; Feng, Bin; Ikuhara, Yuichi; Cho, Hai Jun; Ohta, HiromichiBuffer layer-less fabrication of a high-mobility transparent oxide semiconductor, La-doped BaSnO3-Journal of materials chemistry C-21-May-2019
articleSanchela, Anup V.; Wei, Mian; Zensyo, Haruki; Feng, Bin; Lee, Joonhyuk; Kim, Gowoon; Jeen, Hyoungjeen; Ikuhara, Yuichi; Ohta, HiromichiLarge thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3-Applied physics letters-4-Jun-2018
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