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Hokkaido University Collection of Scholarly and Academic Papers >

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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Sanchela, Anup V.; Wei, Mian; Lee, Joonhyuk; Kim, Gowoon; Jeen, Hyoungjeen; Feng, Bin; Ikuhara, Yuichi; Cho, Hai Jun; Ohta, HiromichiBuffer layer-less fabrication of a high-mobility transparent oxide semiconductor, La-doped BaSnO3-Journal of materials chemistry C-21-May-2019
articleCho, Hai Jun; Sato, Koichi; Wei, Mian; Kim, Gowoon; Ohta, HiromichiEffect of lattice distortions on the electron and thermal transport properties of transparent oxide semiconductor Ba1-xSrxSnO3 solid solution films-Journal of Applied Physics-21-Mar-2020
articleCho, Hai Jun; Onozato, Takaki; Wei, Mian; Sanchela, Anup; Ohta, HiromichiEffects of vacuum annealing on the electron mobility of epitaxial La-doped BaSnO3 films-APL materials-Feb-2019
article (author version)Wei, Mian; Gong, Lizhikun; Liang, Dou-dou; Cho, Hai Jun; Ohta, HiromichiFabrication and Operating Mechanism of Deep-UV Transparent Semiconducting SrSnO3-Based Thin Film Transistor-Advanced electronic materials-Jul-2020
articleWei, Mian; Sanchela, Anup V.; Feng, Bin; Ikuhara, Yuichi; Cho, Hai Jun; Ohta, HiromichiHigh electrical conducting deep-ultraviolet-transparent oxide semiconductor La-doped SrSnO3 exceeding similar to 3000 S cm(-1)-Applied physics letters-13-Jan-2020
articleCho, Hai Jun; Feng, Bin; Onozato, Takaki; Wei, Mian; Sanchela, Anup V.; Ikuhara, Yuichi; Ohta, HiromichiInvestigation of electrical and thermal transport property reductions in La-doped BaSnO3 films-Physical Review Materials-3-Sep-2019
articleSanchela, Anup V.; Wei, Mian; Zensyo, Haruki; Feng, Bin; Lee, Joonhyuk; Kim, Gowoon; Jeen, Hyoungjeen; Ikuhara, Yuichi; Ohta, HiromichiLarge thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3-Applied physics letters-4-Jun-2018
Showing results 1 to 7 of 7

 

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