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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Horikiri, Fumimasa; Fukuhara, Noboru; Ohta, Hiroshi; Asai, Naomi; Narita, Yoshinobu; Yoshida, Takehiro; Mishima, Tomoyoshi; Toguchi, Masachika; Miwa, Kazuki; Sato, TaketomoPhotoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices-IEEE transactions on semiconductor manufacturing-Nov-2019
articleToguchi, Masachika; Miwa, Kazuki; Sato, TaketomoCommunication-Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect-Journal of the electrochemical society-15-Jul-2019
article (author version)Toguchi, Masachika; Miwa, Kazuki; Horikiri, Fumimasa; Fukuhara, Noboru; Narita, Yoshinobu; Yoshida, Takehiro; Sato, TaketomoElectrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O82- ions-Applied Physics Express-Jun-2019
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