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Showing results 1 to 6 of 6
TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleShimauchi, Michihito; Miwa, Kazuki; Toguchi, Masachika; Sato, Taketomo; Motohisa, JunichiFabrication of GaN nanowires containing n(+)-doped top layer by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment-Applied Physics Express (APEX)-1-Nov-2021
articleToguchi, Masachika; Miwa, Kazuki; Horikiri, Fumimasa; Fukuhara, Noboru; Narita, Yoshinobu; Ichikawa, Osamu; Isono, Ryota; Tanaka, Takeshi; Sato, TaketomoSelf-terminating contactless photo-electrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs)-Journal of Applied Physics-8-Jul-2021
articleMiwa, Kazuki; Komatsu, Yuto; Toguchi, Masachika; Horikiri, Fumimasa; Fukuhara, Noboru; Narita, Yoshinobu; Ichikawa, Osamu; Isono, Ryota; Tanaka, Takeshi; Sato, TaketomoSelf-termination of contactless photo-electrochemical (PEC) etching on aluminum gallium nitride/gallium nitride heterostructures-Applied Physics Express (APEX)-1-Feb-2020
article (author version)Horikiri, Fumimasa; Fukuhara, Noboru; Ohta, Hiroshi; Asai, Naomi; Narita, Yoshinobu; Yoshida, Takehiro; Mishima, Tomoyoshi; Toguchi, Masachika; Miwa, Kazuki; Sato, TaketomoPhotoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices-IEEE transactions on semiconductor manufacturing-Nov-2019
articleToguchi, Masachika; Miwa, Kazuki; Sato, TaketomoCommunication-Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect-Journal of the electrochemical society-15-Jul-2019
article (author version)Toguchi, Masachika; Miwa, Kazuki; Horikiri, Fumimasa; Fukuhara, Noboru; Narita, Yoshinobu; Yoshida, Takehiro; Sato, TaketomoElectrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O82- ions-Applied Physics Express-Jun-2019
Showing results 1 to 6 of 6

 

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