HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >

Sort by: In order: Results/Page Authors/Record:
Export metadata:
Showing results 1 to 6 of 6
TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleShiozaki, Nanako; Sato, Taketomo; Hasegawa, HidekiEffects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-Jul-2005
article (author version)Shiozaki, Nanako; Sato, Taketomo; Hashizume, TamotsuFormation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water-Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers-Apr-2007
articleShiozaki, Nanako; Hashizume, TamotsuImprovements of electronic and optical characteristics of n-GaN-based structures by photoelectrochemical oxidation in glycol solution-Journal of Applied Physics-15-Mar-2009
article (author version)Shiozaki, Nanako; Sato, Taketomo; Akazawa, Masamichi; Hasegawa, HidekiPrecisely Controlled Anodic Etching for Processing of GaAs based Quantum Nanostructures and Devices-Journal de Physique IV-Mar-2006
article (author version)Shiozaki, Nanako; Anantathanasarn, Sanguan; Sato, Taketomo; Hashizume, Tamotsu; Hasegawa, HidekiSurface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation-Applied Surface Science-15-Mar-2005
article (author version)Akazawa, Masamichi; Shiozaki, Nanako; Hasegawa, HidekiX-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (111) B Surfaces-Journal de Physique IV-2006
Showing results 1 to 6 of 6

 

Feedback - Hokkaido University