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Showing results 1 to 11 of 11
TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleGyakushi, Takayuki; Asai, Yuki; Honjo, Shusaku; Tsurumaki-Fukuchi, Atsushi; Arita, Masashi; Takahashi, YasuoCharge-offset stability of single-electron devices based on single-layered Fe nanodot array-AIP Advances-1-Mar-2021
article (author version)Tsurumaki-Fukuchi, Atsushi; Tsuta, Yusuke; Arita, Masashi; Takahashi, YasuoControlled Current Transport in Pt/Nb:SrTiO3 Junctions via Insertion of Uniform Thin Layers of TaOx-Physica status solidi. Rapid research letters-Jul-2019
articleTsurumaki-Fukuchi, Atsushi; Katase, Takayoshi; Ohta, Hiromichi; Arita, Masashi; Takahashi, YasuoDirect Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics-ACS applied materials & interfaces-5-Apr-2023
articleGyakushi, Takayuki; Amano, Ikuma; Tsurumaki-Fukuchi, Atsushi; Arita, Masashi; Takahashi, YasuoDouble gate operation of metal nanodot array based single electron device-Scientific reports-6-Jul-2022
article (author version)Tsurumaki-Fukuchi, Atsushi; Nakagawa, Ryosuke; Arita, Masashi; Takahashi, YasuoEELS Analysis of Oxygen Scavenging Effect in a Resistive Switching Structure of Pt/Ta/SrTiO3/Pt-MRS Advances-2018
articleUchida, Takafumi; Jo, Mingyu; Tsurumaki-Fukuchi, Atsushi; Arita, Masashi; Fujiwara, Akira; Takahashi, YasuoFabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire-AIP advances-Nov-2015
article (author version)Arita, Masashi; Tsurumaki-Fukuchi, Atsushi; Takahashi, YasuoFilamentary switching of ReRAM investigated by in-situ TEM-Japanese Journal of Applied Physics (JJAP)-1-Apr-2020
article (author version)Arita, Masashi; Ohno, Yuuki; Murakami, Yosuke; Takamizawa, Keisuke; Tsurumaki-Fukuchi, Atsushi; Takahashi, YasuoMicrostructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles-Nanoscale-Aug-2016
article (author version)Tsurumaki-Fukuchi, Atsushi; Nakagawa, Ryosuke; Arita, Masashi; Takahashi, YasuoSmooth Interfacial Scavenging for Resistive Switching Oxide via the Formation of Highly Uniform Layers of Amorphous TaOx-ACS Applied Materials & Interfaces-22-Jan-2018
article (author version)Tsurumaki-Fukuchi, Atsushi; Tsubaki, Keiji; Katase, Takayoshi; Kamiya, Toshio; Masashi, Arita; Takahashi, YasuoStable and Tunable Current-Induced Phase Transition in Epitaxial Thin Films of Ca2RuO4-ACS applied materials & interfaces-24-Jun-2020
articleArita, Masashi; Takahashi, Akihito; Ohno, Yuuki; Nakane, Akitoshi; Tsurumaki-Fukuchi, Atsushi; Takahashi, YasuoSwitching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM-Scientific Reports-27-Nov-2015
Showing results 1 to 11 of 11


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