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Showing results 1 to 6 of 6
TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Tsurumaki-Fukuchi, Atsushi; Tsuta, Yusuke; Arita, Masashi; Takahashi, YasuoControlled Current Transport in Pt/Nb:SrTiO3 Junctions via Insertion of Uniform Thin Layers of TaOx-Physica status solidi. Rapid research letters-Jul-2019
articleTsurumaki-Fukuchi, Atsushi; Nakagawa, Ryosuke; Arita, Masashi; Takahashi, YasuoSmooth Interfacial Scavenging for Resistive Switching Oxide via the Formation of Highly Uniform Layers of Amorphous TaOx-ACS Applied Materials & Interfaces-22-Jan-2018
article (author version)Tsurumaki-Fukuchi, Atsushi; Nakagawa, Ryosuke; Arita, Masashi; Takahashi, YasuoEELS Analysis of Oxygen Scavenging Effect in a Resistive Switching Structure of Pt/Ta/SrTiO3/Pt-MRS Advances-2018
article (author version)Arita, Masashi; Ohno, Yuuki; Murakami, Yosuke; Takamizawa, Keisuke; Tsurumaki-Fukuchi, Atsushi; Takahashi, YasuoMicrostructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles-Nanoscale-Aug-2016
articleArita, Masashi; Takahashi, Akihito; Ohno, Yuuki; Nakane, Akitoshi; Tsurumaki-Fukuchi, Atsushi; Takahashi, YasuoSwitching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM-Scientific Reports-27-Nov-2015
articleUchida, Takafumi; Jo, Mingyu; Tsurumaki-Fukuchi, Atsushi; Arita, Masashi; Fujiwara, Akira; Takahashi, YasuoFabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire-AIP advances-Nov-2015
Showing results 1 to 6 of 6

 

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