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Hokkaido University Collection of Scholarly and Academic Papers >
Showing results 1 to 6 of 6
| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date | | article (author version) | Tsurumaki-Fukuchi, Atsushi; Tsuta, Yusuke; Arita, Masashi; Takahashi, Yasuo | Controlled Current Transport in Pt/Nb:SrTiO3 Junctions via Insertion of Uniform Thin Layers of TaOx | - | Physica status solidi. Rapid research letters | - | Jul-2019 |
| article | Tsurumaki-Fukuchi, Atsushi; Nakagawa, Ryosuke; Arita, Masashi; Takahashi, Yasuo | Smooth Interfacial Scavenging for Resistive Switching Oxide via the Formation of Highly Uniform Layers of Amorphous TaOx | - | ACS Applied Materials & Interfaces | - | 22-Jan-2018 |
| article (author version) | Tsurumaki-Fukuchi, Atsushi; Nakagawa, Ryosuke; Arita, Masashi; Takahashi, Yasuo | EELS Analysis of Oxygen Scavenging Effect in a Resistive Switching Structure of Pt/Ta/SrTiO3/Pt | - | MRS Advances | - | 2018 |
| article (author version) | Arita, Masashi; Ohno, Yuuki; Murakami, Yosuke; Takamizawa, Keisuke; Tsurumaki-Fukuchi, Atsushi; Takahashi, Yasuo | Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles | - | Nanoscale | - | Aug-2016 |
| article | Arita, Masashi; Takahashi, Akihito; Ohno, Yuuki; Nakane, Akitoshi; Tsurumaki-Fukuchi, Atsushi; Takahashi, Yasuo | Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM | - | Scientific Reports | - | 27-Nov-2015 |
| article | Uchida, Takafumi; Jo, Mingyu; Tsurumaki-Fukuchi, Atsushi; Arita, Masashi; Fujiwara, Akira; Takahashi, Yasuo | Fabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire | - | AIP advances | - | Nov-2015 |
Showing results 1 to 6 of 6
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