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Hokkaido University Collection of Scholarly and Academic Papers >
Showing results 1 to 7 of 7
Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date | article (author version) | Kameda, Atsushi; Kasai, Seiya; Sato, Taketomo; Hasegawa, Hideki | Effects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs | - | Solid-State Electronics | - | Feb-2003 |
article (author version) | Sato, Taketomo; Kasai, Seiya; Okada, Hiroshi; Hasegawa, Hideki | Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Jul-2000 |
article (author version) | Kaneshiro, Chinami; Sato, Taketomo; Hasegawa, Hideki | Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Feb-1999 |
article (author version) | Sato, Taketomo; Kaneshiro, Chinami; Okada, Hiroshi; Hasegawa, Hideki | Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Apr-1999 |
article | Sato, Taketomo; Tamai, Isao; Hasegawa, Hideki | Growth kinetics and modeling of selective molecular beam epitaxial growth of GaAs ridge quantum wires on pre-patterned nonplanar substrates | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | Jul-2004 |
proceedings (author version) | Sato, Taketomo; Tamai, Isao; Hasegawa, Hideki | Selective MBE Growth of GaAs Ridge Quantum Wire Arrays on Patterned (001) Substrates and Its Growth Mechanism | - | Institute of Physics conference series | - | 2003 |
article (author version) | Sato, Taketomo; Kaneshiro, Chinami; Hasegawa, Hideki | The Strong Correlation between Interface Microstructure and Barrier Height in Pt/n-InP Schottky Contacts Formed by an In Situ Electrochemical Process | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Feb-1999 |
Showing results 1 to 7 of 7
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