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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Kasai, Seiya; Ichiki, Akihisa; Tadokoro, YukihiroDivergence of relative difference in Gaussian distribution function and stochastic resonance in a bistable system with frictionless state transition-Applied Physics Express (APEX)-Mar-2018
article (author version)Okamoto, Shoma; Sato, Masaki; Sasaki, Kentaro; Kasai, SeiyaDetection of charge dynamics of a tetraphenylporphyrin particle using GaAs-based nanowire enhanced by particle-metal tip capacitive coupling-Japanese Journal of Applied Physics (JJAP)-Jun-2017
article (author version)Kuroda, Ryota; Kasai, SeiyaImplementation of a noise-coexistence threshold logic architecture on a GaAs-based nanowire FET network-International journal of parallel, emergent and distributed systems-May-2017
article (author version)Shirata, Kento; Inden, Yuki; Kasai, Seiya; Oya, Takahide; Hagiwara, Yosuke; Kaeriyama, Shunichi; Nakamura, HideyukiRobust myoelectric signal detection based on stochastic resonance using multiple-surface-electrode array made of carbon nanotube composite paper-Japanese Journal of Applied Physics(JJAP)-Apr-2016
article (author version)Sato, Masaki; Yin, Xiang; Kuroda, Ryota; Kasai, SeiyaDetection of discrete surface charge dynamics in GaAs-based nanowire through metal-tip-induced current fluctuation-Japanese Journal of Applied Physics(JJAP)-Feb-2016
article (author version)Abe, Yushi; Kuroda, Ryota; Ying, Xiang; Sato, Masaki; Tanaka, Takayuki; Kasai, SeiyaStructural parameter dependence of directed current generation in GaAs nanowire-based electron Brownian ratchet devices-Japanese Journal of Applied Physics(JJAP)-Jun-2015
articleYin, Xiang; Sato, Masaki; Kasai, SeiyaAnalysis on Non-Ideal Nonlinear Characteristics of Graphene-Based Three-Branch Nano-Junction Device-IEICE transactions on electronics-May-2015
article (author version)Inoue, Shinya; Kuroda, Ryota; Yin, Xiang; Sato, Masaki; Kasai, SeiyaDetection of molecular charge dynamics through current noise in a GaAs-based nanowire FET-Japanese Journal of Applied Physics(JJAP)-Apr-2015
articleKasai, Seiya; Tadokoro, Yukihiro; Ichiki, AkihisaDesign and characterization of nonlinear functions for the transmission of a small signal with non-Gaussian noise-Physical Review E-16-Dec-2013
articleKasai, Seiya; Aono, Masashi; Naruse, MakotoAmoeba-inspired computing architecture implemented using charge dynamics in parallel capacitance network-Applied Physics Letters-14-Oct-2013
article (author version)Sato, Masaki; Kasai, SeiyaCharacterization of GaAs-Based Three-Branch Nanowire Junction Devices by Light-Induced Local Conductance Modulation Method-Japanese Journal of Applied Physics(JJAP)-Jun-2013
article (author version)Tanaka, Takayuki; Nakano, Yuki; Kasai, SeiyaGaAs-Based Nanowire Devices with Multiple Asymmetric Gates for Electrical Brownian Ratchets-Japanese Journal of Applied Physics(JJAP)-Jun-2013
articleZHao, Hong-Quan; Kasai, SeiyaWPG-Controlled Quantum BDD Circuits with BDD Architecture on GaAs-Based Hexagonal Nanowire Network Structure-Journal of Nanomaterials-2012
article (author version)Shiratori, Yuta; Miura, Kensuke; Kasai, SeiyaProgrammable nano-switch array using SiN/GaAs interface traps on a GaAs nanowire network for reconfigurable BDD logic circuits-Microelectronic Engineering-Aug-2011
article (author version)Zhao, Hong-Quan; Kasai, Seiya; Shiratori, Yuta; Hashizume, TamotsuA binary-decision-diagram-based two-bit arithmetic logic unit on a GaAs-based regular nanowire network with hexagonal topologyBDD-based 2-bit Arithmetic Logic Unit on GaAs-based Regular Nanowire Network with Hexagonal TopologyNanotechnology-17-Jun-2009
article (author version)Kasai, Seiya; Asai, TetsuyaStochastic Resonance in Schottky Wrap Gate-controlled GaAs Nanowire Field-Effect Transistors and Their Networks-Applied Physics Express-25-Aug-2008
article (author version)Kasai, Seiya; Nakamura, Tatsuya; Rahmani, Shaharin Fadzli Bin Abd; Shiratori, YutaStudy on Nonlinear Electrical Characteristics of GaAs-Based Three-Branch Nanowire Junctions Controlled by Schottky Wrap Gates-Japanese Journal of Applied Physics-25-Jun-2008
article (author version)Shiratori, Yuta; Kasai, SeiyaEffect of Size Reduction on Switching Characteristics in GaAs-Based Schottky-Wrap-Gate Quantum Wire Transistors-Japanese Journal of Applied Physics-25-Apr-2008
article (author version)Tamura, Takahiro; Kotani, Junji; Kasai, Seiya; Hashizume, TamotsuNearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High-Electron-Mobility Transistor-Applied Physics Express-25-Feb-2008
articleKotani, Junji; Tajima, Masafumi; Kasai, Seiya; Hashizume, TamotsuMechanism of surface conduction in the vicinity of Schottky gates on AlGaN/GaN heterostructures-Applied Physics Letters-27-Aug-2007
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