HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >

Sort by: In order: Results/Page Authors/Record:
Export metadata:
Showing results 1 to 10 of 10
TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleSugawara, Katsuya; Kotani, Junji; Hashizume, TamotsuNear-midgap deep levels in Al0.26Ga0.74N grown by metal-organic chemical vapor deposition-Applied Physics Letters-13-Apr-2009
article (author version)Tamura, Takahiro; Kotani, Junji; Kasai, Seiya; Hashizume, TamotsuNearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High-Electron-Mobility Transistor-Applied Physics Express-25-Feb-2008
articleKotani, Junji; Tajima, Masafumi; Kasai, Seiya; Hashizume, TamotsuMechanism of surface conduction in the vicinity of Schottky gates on AlGaN/GaN heterostructures-Applied Physics Letters-27-Aug-2007
articleKotani, Junji; Kaneko, Masamitsu; Hasegawa, Hideki; Hashizume, TamotsuLarge reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism-Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures-Jul-2006
article (author version)Hashizume, Tamotsu; Kotani, Junji; Basile, Alberto; Kaneko, MasamitsuSurface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors-Japanese Journal of Applied Physics. Pt. 2, Letters & express letters-Feb-2006
articleKotani, Junji; Kasai, Seiya; Hashizume, Tamotsu; Hasegawa, HidekiLateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-Jul-2005
article (author version)Matsuo, Kazushi; Negoro, Noboru; Kotani, Junji; Hashizume, Tamotsu; Hasegawa, HidekiPt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure-Applied Surface Science-15-May-2005
article (author version)Kotani, Junji; Hasegawa, Hideki; Hashizume, TamotsuComputer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model-Applied Surface Science-15-Oct-2004
articleKotani, Junji; Hashizume, Tamotsu; Hasegawa, HidekiAnalysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-20-Aug-2004
articleHashizume, Tamotsu; Kotani, Junji; Hasegawa, HidekiLeakage mechanism in GaN and AlGaN Schottky interfaces-Applied Physics Letters-14-Jul-2004
Showing results 1 to 10 of 10


Hokkaido University