HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >

Sort by: In order: Results/Page Authors/Record:
Export metadata:
Showing results 1 to 16 of 16
TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Yamazaki, A.; Watanabe, T.; Tsunogai, U.; Hasegawa, H.; Yamano, H.The coral δ15N record of terrestrial nitrate loading varies with river catchment land use-Coral Reefs-28-Oct-2014
proceedings (author version)Kasai, S.; Yumoto, M.; Sato, T.; Hasegawa, H.Design and Implementation of Ultra-Small-Size and Ultra-Low-Power Digital Systems on GaAs-based Hexagonal Nanowire Networks Utilizing a Hexagonal BDD Quantum Circuit Approach-ECS Proceeding-2004
article (author version)Hasegawa, H.; Date, H.; Shimozuma, M.Electron swarm parameters in water vapour-Journal of Physics D Applied Physics-21-Apr-2007
articleKozasa, T.; Hasegawa, H.; Nomoto, K.Formation of dust grains in the ejecta of SN 1987A. II-Astronomy and Astrophysics-Sep-1991
proceedings (author version)Kasai, S.; Satoh, Y.; Hasegawa, H.GaAs quantum wire transistors and single electron transistors using Schottky wrap gates for quantum integrated circuits-Institute of Physics conference series-2000
article (author version)Kasai, S.; Kotani, J.; Hashizume, T.; Hasegawa, H.Gate Control, Surface Leakage Currents and Peripheral Charging in AlGaN/GaN Heterostructure Field Effect Transistors Having Nanometer-Scale Schottky Gates-Journal of Electronic Materials-Apr-2006
proceedings (author version)Kasai, S.; Hasegawa, H.Gate Controlled Conductance Oscillations in GaAs Schottky Wrap-Gate Single Electron Transistors-Springer Proceedings in Physics-2001
article (author version)Date, H.; Sutherland, K. L.; Hasegawa, H.; Shimcizurna, M.Ionization and excitation collision processes of electrons in liquid water-Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms-Dec-2007
articleKumakura, K.; Makimoto, T.; Kobayashi, N.; Hashizume, T.; Fukui, T.; Hasegawa, H.Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence-Applied Physics Letters-Jan-2005
articleYong, Gui Xie.; Kasai, S.; Takahashi, H.; Chao, Jiang.; Hasegawa, H.A novel InGaAs/InAlAs insulated gate pseudomorphic HEMT with a silicon interface control layer showing high DC- and RF-performance-IEEE Electron Device Letters-Jul-2001
articleHasegawa, H.; Date, H.; Shimozuma, M.; Itoh, H.Properties of electron swarms in CF3I-Applied Physics Letters-7-Sep-2009
articleKasai, S.; Hasegawa, H.A single electron binary-decision-diagram quantum logic circuit based on Schottky wrap gate control of a GaAs nanowire hexagon-IEEE Electron Device Letters-Aug-2002
articleHasegawa, H.; Date, H.Study of electron transport in hydrocarbon gases-Journal of applied physics-8-Apr-2015
articleOotomo, S.; Hashizume, T.; Hasegawa, H.Surface Passivation of AlGaN/GaN Heterostructures Using an Ultrathin Al2O3 Layer-Physica Status Solidi (a)-22-Nov-2001
articleHasegawa, H.; Date, H.; Yoshida, K.; Shimozuma, M.Time-of-flight observation of electron swarm in methane-Journal of Applied Physics-Jun-2009
bulletin (article)岩舘, 弘剛; 斉藤, 俊也; 長谷川, 英機フォトルミネセンス法によるInGaAs表面の評価Characterization of InGaAs Surface by Photoluminescence北海道大學工學部研究報告Bulletin of the Faculty of Engineering, Hokkaido University20-Jul-1991
Showing results 1 to 16 of 16


Hokkaido University