| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date |
| article (author version) | Hatakeyama, Yuki; Akazawa, Masamichi | Interface state density distribution near conduction band edge at Al2O3/Mg-ion-implanted GaN interface formed after activation annealing using AlN cap layer | - | AIP Advances | - | 21-Dec-2022 |
| article | Akazawa, Masamichi; Tamamura, Yuya; Nukariya, Takahide; Kubo, Kouta; Sato, Taketomo; Narita, Tetsuo; Kachi, Tetsu | Detection of defect levels in vicinity of Al₂O₃/p-type GaN interface using sub-bandgap-light-assisted capacitance-voltage method | - | Journal of Applied Physics | - | 16-Nov-2022 |
| article (author version) | Akazawa, Masamichi; Murai, Shunta; Kachi, Tetsu | Encapsulant-Dependent Effects of Long-Term Low-Temperature Annealing on Interstitial Defects in Mg-Ion-Implanted GaN | - | Journal of electronic materials | - | 3-Feb-2022 |
| article | Akazawa, Masamichi; Kitawaki, Yuya | Formation of thermally grown SiO2/GaN interface | - | AIP Advances | - | 13-Aug-2021 |
| article (author version) | Akazawa, Masamichi; Wu, Encheng; Sakurai, Hideki; Bockowski, Michal; Narita, Tetsuo; Kachi, Tetsu | X-ray photoelectron spectroscopy study on effects of ultra-high-pressure annealing on surface of Mg-ion-implanted GaN | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Mar-2021 |
| article (author version) | Akazawa, Masamichi; Kamoshida, Ryo; Murai, Shunta; Kachi, Tetsu; Uedono, Akira | Low-temperature annealing behavior of defects in Mg-ion-implanted GaN studied using MOS diodes and monoenergetic positron beam | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Jan-2021 |
| article (author version) | Akazawa, Masamichi; Kamoshida, Ryo | Analysis of simultaneous occurrence of shallow surface Fermi level pinning and deep depletion in MOS diode with Mg-ion-implanted GaN before activation annealing | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Sep-2020 |
| article (author version) | Isobe, Kazuki; Akazawa, Masamichi | Effects of surface treatment on Fermi level pinning at metal/GaN interfaces formed on homoepitaxial GaN layers | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Apr-2020 |
| article (author version) | Akazawa, Masamichi; Kamoshida, Ryo; Murai, Shunta; Narita, Tetsuo; Omori, Masato; Suda, Jun; Kachi, Tetsu | Effects of Dosage Increase on Electrical Properties of Metal-Oxide-Semiconductor Diodes with Mg-Ion-Implanted GaN Before Activation Annealing | - | Physica status solidi B-basic solid state physics | - | 6-Feb-2020 |
| article (author version) | Akazawa, Masamichi; Kitajima, Shouhei; Kitawaki, Yuya | Control of plasma-CVD SiO2/InAlN interface by N2O plasma oxidation | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Oct-2019 |
| article (author version) | Akazawa, Masamichi; Kitajima, Shouhei | Control of plasma-CVD SiO2/InAlN interface by ultrathin atomic-layer-deposited Al2O3 interlayer | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Aug-2019 |
| article (author version) | Akazawa, Masamichi; Uetake, Kei | Impact of low-temperature annealing on defect levels generated by Mg-ion-implanted GaN | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Jun-2019 |
| article | Isobe, Kazuki; Akazawa, Masamichi | Impact of surface treatment on metal-work-function dependence of barrier height of GaN-on-GaN Schottky barrier diode | - | AIP Advances | - | Nov-2018 |
| article (author version) | Akazawa, Masamichi; Hasezaki, Taito | Effect of Insertion of Ultrathin Al2O3 Interlayer at Metal/GaN Interfaces | - | Physica status solidi B-basic solid state physics | - | May-2018 |
| article | Akazawa, Masamichi; Yokota, Naoshige; Uetake, Kei | Detection of deep-level defects and reduced carrier concentration in Mg-ion-implanted GaN before high-temperature annealing | - | AIP Advances | - | Feb-2018 |
| article (author version) | Akazawa, Masamichi; Seino, Atsushi | Reduction of interface state density at SiO2/InAlN interface by inserting ultrathin Al2O3 and plasma oxide interlayers | - | Physica status solidi B-basic solid state physics | - | Aug-2017 |
| article | Matys, M.; Adamowicz, B.; Domanowska, A.; Michalewicz, A.; Stoklas, R.; Akazawa, M.; Yatabe, Z.; Hashizume, T. | On the origin of interface states at oxide/III-nitride heterojunction interfaces | - | Journal of Applied Physics | - | 14-Dec-2016 |
| article | Akazawa, Masamichi; Chiba, Masahito; Nakano, Takuma | Measurement of interface-state-density distribution near conduction band at interface between atomic-layer-deposited Al2O3 and silicon-doped InAlN | - | Applied Physics Letters | - | 10-Jun-2013 |
| article | Nakano, Takuma; Akazawa, Masamichi | Native Oxide Removal from InAlN Surfaces by Hydrofluoric Acid Based Treatment | - | IEICE Transactions On Electronics | - | May-2013 |
| article | Akazawa, M.; Nakano, T. | Valence band offset at Al2O3/In0.17Al0.83N interface formed by atomic layer deposition | - | Applied Physics Letters | - | 17-Sep-2012 |
