HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >

Sort by: In order: Results/Page Authors/Record:
Export metadata:
Showing results 1 to 20 of 26
 next >
TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleAkazawa, Masamichi; Kitawaki, YuyaFormation of thermally grown SiO2/GaN interface-AIP Advances-13-Aug-2021
article (author version)Akazawa, Masamichi; Kamoshida, RyoAnalysis of simultaneous occurrence of shallow surface Fermi level pinning and deep depletion in MOS diode with Mg-ion-implanted GaN before activation annealing-Japanese Journal of Applied Physics (JJAP)-1-Sep-2020
article (author version)Isobe, Kazuki; Akazawa, MasamichiEffects of surface treatment on Fermi level pinning at metal/GaN interfaces formed on homoepitaxial GaN layers-Japanese Journal of Applied Physics (JJAP)-1-Apr-2020
article (author version)Akazawa, Masamichi; Kamoshida, Ryo; Murai, Shunta; Narita, Tetsuo; Omori, Masato; Suda, Jun; Kachi, TetsuEffects of Dosage Increase on Electrical Properties of Metal-Oxide-Semiconductor Diodes with Mg-Ion-Implanted GaN Before Activation Annealing-Physica status solidi B-basic solid state physics-6-Feb-2020
article (author version)Akazawa, Masamichi; Kitajima, Shouhei; Kitawaki, YuyaControl of plasma-CVD SiO2/InAlN interface by N2O plasma oxidation-Japanese Journal of Applied Physics (JJAP)-1-Oct-2019
article (author version)Akazawa, Masamichi; Kitajima, ShouheiControl of plasma-CVD SiO2/InAlN interface by ultrathin atomic-layer-deposited Al2O3 interlayer-Japanese Journal of Applied Physics (JJAP)-1-Aug-2019
article (author version)Akazawa, Masamichi; Uetake, KeiImpact of low-temperature annealing on defect levels generated by Mg-ion-implanted GaN-Japanese Journal of Applied Physics (JJAP)-1-Jun-2019
articleIsobe, Kazuki; Akazawa, MasamichiImpact of surface treatment on metal-work-function dependence of barrier height of GaN-on-GaN Schottky barrier diode-AIP Advances-Nov-2018
article (author version)Akazawa, Masamichi; Hasezaki, TaitoEffect of Insertion of Ultrathin Al2O3 Interlayer at Metal/GaN Interfaces-Physica status solidi B-basic solid state physics-May-2018
articleAkazawa, Masamichi; Yokota, Naoshige; Uetake, KeiDetection of deep-level defects and reduced carrier concentration in Mg-ion-implanted GaN before high-temperature annealing-AIP Advances-Feb-2018
article (author version)Akazawa, Masamichi; Seino, AtsushiReduction of interface state density at SiO2/InAlN interface by inserting ultrathin Al2O3 and plasma oxide interlayers-Physica status solidi B-basic solid state physics-Aug-2017
articleMatys, M.; Adamowicz, B.; Domanowska, A.; Michalewicz, A.; Stoklas, R.; Akazawa, M.; Yatabe, Z.; Hashizume, T.On the origin of interface states at oxide/III-nitride heterojunction interfaces-Journal of Applied Physics-14-Dec-2016
articleAkazawa, Masamichi; Chiba, Masahito; Nakano, TakumaMeasurement of interface-state-density distribution near conduction band at interface between atomic-layer-deposited Al2O3 and silicon-doped InAlN-Applied Physics Letters-10-Jun-2013
articleNakano, Takuma; Akazawa, MasamichiNative Oxide Removal from InAlN Surfaces by Hydrofluoric Acid Based Treatment-IEICE Transactions On Electronics-May-2013
articleAkazawa, M.; Nakano, T.Valence band offset at Al2O3/In0.17Al0.83N interface formed by atomic layer deposition-Applied Physics Letters-17-Sep-2012
article (author version)Akazawa, Masamichi; Hasegawa, HidekiHigh-k Al2O3 MOS structures with Si interface control layer formed on air-exposed GaAs and InGaAs wafers-Applied Surface Science-15-Jul-2010
articleAkazawa, M.; Matsuyama, T.; Hashizume, T.; Hiroki, M.; Yamahata, S.; Shigekawa, N.Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy-Applied Physics Letters-29-Mar-2010
articleAkazawa, Masamichi; Hasegawa, HidekiFormation of ultrathin SiNx∕Si interface control double layer on (001) and (111) GaAs surfaces for ex situ deposition of high-k dielectrics-Journal of Vacuum Science & Technology B : Microelectronics and Nanometer Structures-Jul-2007
articleHasegawa, Hideki; Akazawa, MasamichiHydrogen sensing characteristics and mechanism of Pd/AlGaN/GaN Schottky diodes subjected to oxygen gettering-Journal of Vacuum Science & Technology B : Microelectronics and Nanometer Structures-Jul-2007
article (author version)Akazawa, Masamichi; Hasegawa, HidekiMBE growth and in situ XPS characterization of silicon interlayers on (111)B surfaces for passivation of GaAs quantum wire devices-Journal of Crystal Growth-Apr-2007
Showing results 1 to 20 of 26
 next >


Hokkaido University