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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleKasai, Seiya; Aono, Masashi; Naruse, MakotoAmoeba-inspired computing architecture implemented using charge dynamics in parallel capacitance network-Applied Physics Letters-14-Oct-2013
articleYin, Xiang; Sato, Masaki; Kasai, SeiyaAnalysis on Non-Ideal Nonlinear Characteristics of Graphene-Based Three-Branch Nano-Junction Device-IEICE transactions on electronics-May-2015
article (author version)Zhao, Hong-Quan; Kasai, Seiya; Shiratori, Yuta; Hashizume, TamotsuA binary-decision-diagram-based two-bit arithmetic logic unit on a GaAs-based regular nanowire network with hexagonal topologyBDD-based 2-bit Arithmetic Logic Unit on GaAs-based Regular Nanowire Network with Hexagonal TopologyNanotechnology-17-Jun-2009
article (author version)Sato, Masaki; Kasai, SeiyaCharacterization of GaAs-Based Three-Branch Nanowire Junction Devices by Light-Induced Local Conductance Modulation Method-Japanese Journal of Applied Physics(JJAP)-Jun-2013
article (author version)Kasai, Seiya; Neguro, Noboru; Hasegawa, HidekiConductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown (001) Surfaces of III-V Compound Semiconductors-Applied Surface Science-15-May-2001
article (author version)Sasaki, Kentaro; Saito, Shunsuke; Kasai, SeiyaCurrent timer switch in a GaAs-based nanowire coupled with polyoxometalate nanoparticle and conductive AFM tip-Japanese Journal of Applied Physics (JJAP)-1-Oct-2020
article (author version)Sato, Taketomo; Kasai, Seiya; Hasegawa, HidekiCurrent transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process-Applied Surface Science-2001
articleKasai, Seiya; Tadokoro, Yukihiro; Ichiki, AkihisaDesign and characterization of nonlinear functions for the transmission of a small signal with non-Gaussian noise-Physical Review E-16-Dec-2013
article (author version)Okamoto, Shoma; Sato, Masaki; Sasaki, Kentaro; Kasai, SeiyaDetection of charge dynamics of a tetraphenylporphyrin particle using GaAs-based nanowire enhanced by particle-metal tip capacitive coupling-Japanese Journal of Applied Physics (JJAP)-Jun-2017
article (author version)Sato, Masaki; Yin, Xiang; Kuroda, Ryota; Kasai, SeiyaDetection of discrete surface charge dynamics in GaAs-based nanowire through metal-tip-induced current fluctuation-Japanese Journal of Applied Physics(JJAP)-Feb-2016
article (author version)Inoue, Shinya; Kuroda, Ryota; Yin, Xiang; Sato, Masaki; Kasai, SeiyaDetection of molecular charge dynamics through current noise in a GaAs-based nanowire FET-Japanese Journal of Applied Physics(JJAP)-Apr-2015
article (author version)Kasai, Seiya; Ichiki, Akihisa; Tadokoro, YukihiroDivergence of relative difference in Gaussian distribution function and stochastic resonance in a bistable system with frictionless state transition-Applied Physics Express (APEX)-Mar-2018
article (author version)Saito, Kenta; Kasai, SeiyaEffect of feedback delays on solution quality in amoeba-inspired computing system that solves traveling salesman problem-Applied Physics Express (APEX)-1-Nov-2020
article (author version)Shiratori, Yuta; Kasai, SeiyaEffect of Size Reduction on Switching Characteristics in GaAs-Based Schottky-Wrap-Gate Quantum Wire Transistors-Japanese Journal of Applied Physics-25-Apr-2008
article (author version)Kameda, Atsushi; Kasai, Seiya; Sato, Taketomo; Hasegawa, HidekiEffects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs-Solid-State Electronics-Feb-2003
article (author version)Sato, Taketomo; Kasai, Seiya; Okada, Hiroshi; Hasegawa, HidekiElectrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process-Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers-Jul-2000
article (author version)Kasai, Seiya; Hashizume, Tamotsu; Hasegawa, HidekiElectron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates-Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers-Dec-1996
articleNakamura, Tatsuya; Kasai, Seiya; Shiratori, Yuta; Hashizume, TamotsuFabrication and characterization of a GaAs-based three-terminal nanowire junction device controlled by double Schottky wrap gates-Applied Physics Letters-Mar-2007
article (author version)Kasai, Seiya; Jinushi, Kei-ichiroh; Tomozawa, Hidemasa; Hasegawa, HidekiFabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas-Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers-Mar-1997
articleXIE, Yong-Gui; KASAI, Seiya; TAKAHASHI, Hiroshi; JIANG, Chao; HASEGAWA, HidekiFabrication and Characterization of InGaAs/InAlAs Insulated Gate Pseudomorphic HENTs Having a Silicon Interface Control Layer-IEICE Transactions on Electronics-Oct-2001
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