| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date |
| article | Kasai, Seiya; Aono, Masashi; Naruse, Makoto | Amoeba-inspired computing architecture implemented using charge dynamics in parallel capacitance network | - | Applied Physics Letters | - | 14-Oct-2013 |
| article | Yin, Xiang; Sato, Masaki; Kasai, Seiya | Analysis on Non-Ideal Nonlinear Characteristics of Graphene-Based Three-Branch Nano-Junction Device | - | IEICE transactions on electronics | - | May-2015 |
| article (author version) | Zhao, Hong-Quan; Kasai, Seiya; Shiratori, Yuta; Hashizume, Tamotsu | A binary-decision-diagram-based two-bit arithmetic logic unit on a GaAs-based regular nanowire network with hexagonal topology | BDD-based 2-bit Arithmetic Logic Unit on GaAs-based Regular Nanowire Network with Hexagonal Topology | Nanotechnology | - | 17-Jun-2009 |
| article (author version) | Sato, Masaki; Kasai, Seiya | Characterization of GaAs-Based Three-Branch Nanowire Junction Devices by Light-Induced Local Conductance Modulation Method | - | Japanese Journal of Applied Physics(JJAP) | - | Jun-2013 |
| article (author version) | Kasai, Seiya; Neguro, Noboru; Hasegawa, Hideki | Conductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown (001) Surfaces of III-V Compound Semiconductors | - | Applied Surface Science | - | 15-May-2001 |
| article (author version) | Sasaki, Kentaro; Saito, Shunsuke; Kasai, Seiya | Current timer switch in a GaAs-based nanowire coupled with polyoxometalate nanoparticle and conductive AFM tip | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Oct-2020 |
| article (author version) | Sato, Taketomo; Kasai, Seiya; Hasegawa, Hideki | Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process | - | Applied Surface Science | - | 2001 |
| article | Kasai, Seiya; Tadokoro, Yukihiro; Ichiki, Akihisa | Design and characterization of nonlinear functions for the transmission of a small signal with non-Gaussian noise | - | Physical Review E | - | 16-Dec-2013 |
| article (author version) | Okamoto, Shoma; Sato, Masaki; Sasaki, Kentaro; Kasai, Seiya | Detection of charge dynamics of a tetraphenylporphyrin particle using GaAs-based nanowire enhanced by particle-metal tip capacitive coupling | - | Japanese Journal of Applied Physics (JJAP) | - | Jun-2017 |
| article (author version) | Sato, Masaki; Yin, Xiang; Kuroda, Ryota; Kasai, Seiya | Detection of discrete surface charge dynamics in GaAs-based nanowire through metal-tip-induced current fluctuation | - | Japanese Journal of Applied Physics(JJAP) | - | Feb-2016 |
| article (author version) | Inoue, Shinya; Kuroda, Ryota; Yin, Xiang; Sato, Masaki; Kasai, Seiya | Detection of molecular charge dynamics through current noise in a GaAs-based nanowire FET | - | Japanese Journal of Applied Physics(JJAP) | - | Apr-2015 |
| article (author version) | Kasai, Seiya; Ichiki, Akihisa; Tadokoro, Yukihiro | Divergence of relative difference in Gaussian distribution function and stochastic resonance in a bistable system with frictionless state transition | - | Applied Physics Express (APEX) | - | Mar-2018 |
| article (author version) | Saito, Kenta; Kasai, Seiya | Effect of feedback delays on solution quality in amoeba-inspired computing system that solves traveling salesman problem | - | Applied Physics Express (APEX) | - | 1-Nov-2020 |
| article (author version) | Shiratori, Yuta; Kasai, Seiya | Effect of Size Reduction on Switching Characteristics in GaAs-Based Schottky-Wrap-Gate Quantum Wire Transistors | - | Japanese Journal of Applied Physics | - | 25-Apr-2008 |
| article (author version) | Kameda, Atsushi; Kasai, Seiya; Sato, Taketomo; Hasegawa, Hideki | Effects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs | - | Solid-State Electronics | - | Feb-2003 |
| article (author version) | Sato, Taketomo; Kasai, Seiya; Okada, Hiroshi; Hasegawa, Hideki | Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Jul-2000 |
| article (author version) | Kasai, Seiya; Hashizume, Tamotsu; Hasegawa, Hideki | Electron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Dec-1996 |
| article | Nakamura, Tatsuya; Kasai, Seiya; Shiratori, Yuta; Hashizume, Tamotsu | Fabrication and characterization of a GaAs-based three-terminal nanowire junction device controlled by double Schottky wrap gates | - | Applied Physics Letters | - | Mar-2007 |
| article (author version) | Kasai, Seiya; Jinushi, Kei-ichiroh; Tomozawa, Hidemasa; Hasegawa, Hideki | Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Mar-1997 |
| article | XIE, Yong-Gui; KASAI, Seiya; TAKAHASHI, Hiroshi; JIANG, Chao; HASEGAWA, Hideki | Fabrication and Characterization of InGaAs/InAlAs Insulated Gate Pseudomorphic HENTs Having a Silicon Interface Control Layer | - | IEICE Transactions on Electronics | - | Oct-2001 |
