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Showing results 1 to 16 of 16
TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleCho, Hai Jun; Onozato, Takaki; Wei, Mian; Sanchela, Anup; Ohta, HiromichiEffects of vacuum annealing on the electron mobility of epitaxial La-doped BaSnO3 films-APL materials-Feb-2019
articleOnozato, Takaki; Nezu, Yukio; Cho, Hai Jun; Ohta, HiromichiFast operation of a WO3-based solid-state electrochromic transistor-AIP Advances-Feb-2019
articleZhang, Yuqiao; Feng, Bin; Hayashi, Hiroyuki; Chang, Cheng-Ping; Sheu, Yu-Miin; Tanaka, Isao; Ikuhara, Yuichi; Ohta, HiromichiDouble thermoelectric power factor of a 2D electron system-Nature communications-20-Jun-2018
articleSanchela, Anup V.; Wei, Mian; Zensyo, Haruki; Feng, Bin; Lee, Joonhyuk; Kim, Gowoon; Jeen, Hyoungjeen; Ikuhara, Yuichi; Ohta, HiromichiLarge thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3-Applied physics letters-4-Jun-2018
articleOhta, Hiromichi; Kim, Sung Wng; Kaneki, Shota; Yamamoto, Atsushi; Hashizume, TamotsuHigh Thermoelectric Power Factor of High-Mobility 2D Electron Gas-Advanced Science-Jan-2018
articleNezu, Yukio; Zhang, Yu-Qiao; Chen, Chunlin; Ikuhara, Yuichi; Ohta, HiromichiSolid-phase epitaxial film growth and optical properties of a ferroelectric oxide, Sr2Nb2O7-Journal of Applied Physics-7-Oct-2017
articleKatase, Takayoshi; Suzuki, Yuki; Ohta, HiromichiHighly conducting leakage-free electrolyte for SrCoOx-based non-volatile memory device-Journal of Applied Physics-7-Oct-2017
articleSanchela, Anup V.; Onozato, Takaki; Feng, Bin; Ikuhara, Yuichi; Ohta, HiromichiThermopower modulation clarification of the intrinsic effective mass in transparent oxide semiconductor BaSnO3-Physical Review Materials-4-Aug-2017
articleZhang, Yuqiao; Feng, Bin; Hayashi, Hiroyuki; Tohei, Tetsuya; Tanaka, Isao; Ikuhara, Yuichi; Ohta, HiromichiThermoelectric phase diagram of the SrTiO3-SrNbO3 solid solution system-Journal of Applied Physics-14-May-2017
articleKatase, Takayoshi; Endo, Kenji; Ohta, HiromichiInfrared-transmittance tunable metal-insulator conversion device with thin-film-transistor-type structure on a glass substrate-APL materials-May-2017
articleKatase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, HiromichiA transparent electrochromic metal-insulator switching device with three-terminal transistor geometry-Scientific reports-13-May-2016
article (author version)Katase, Takayoshi; Takahashi, Hidefumi; Tohei, Tetsuya; Suzuki, Yuki; Yamanouchi, Michihiko; Ikuhara, Yuichi; Terasaki, Ichiro; Ohta, HiromichiSolid-Phase Epitaxial Growth of A-Site-Ordered Perovskite Sr4-xErxCo4O12-delta: A Room Temperature Ferrimagnetic p-Type Semiconductor-Advanced electronic materials-Dec-2015
articleKatase, Takayoshi; Endo, Kenji; Ohta, HiromichiThermopower analysis of metal-insulator transition temperature modulations in vanadium dioxide thin films with lattice distortion-Physical review B-13-Jul-2015
article (author version)Katase, Takayoshi; Endo, Kenji; Tohei, Tetsuya; Ikuhara, Yuichi; Ohta, HiromichiRoom-Temperature-Protonation-Driven On-Demand Metal-Insulator Conversion of a Transition Metal Oxide-Advanced Electronic Materials-Jul-2015
articleKatase, Takayoshi; Endo, Kenji; Ohta, HiromichiCharacterization of electronic structure around metal-insulator transition in V1-x WxO2 thin films by thermopower measurement-Journal of the Ceramic Society of Japan-May-2015
articleKatase, Takayoshi; Endo, Kenji; Ohta, HiromichiThermopower analysis of the electronic structure around the metal-insulator transition in V1-xWxO2-Physical review. B-21-Oct-2014
Showing results 1 to 16 of 16

 

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