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Showing results 1 to 17 of 17
TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
proceedings (author version)Tomioka, Katsuhiro; Motohisa, Junichi; Fukui, TakashiAdvances in Steep-Slope Tunnel FETs---Sep-2016
articleChiba, Kohei; Tomioka, Katsuhiro; Yoshida, Akinobu; Motohisa, JunichiComposition controllability of InGaAs nanowire arrays in selective area growth with controlled pitches on Si platform-AIP Advances-Dec-2017
articleYoshida, Akinobu; Gamo, Hironori; Motohisa, Junichi; Tomioka, KatsuhiroCreation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germanium-Scientific reports-31-Jan-2022
articleTomioka, Katsuhiro; Fukui, TakashiCurrent increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length-Applied Physics Letters-19-Feb-2014
articleAkamatsu, Tomoya; Tomioka, Katsuhiro; Motohisa, JunichiDemonstration of InP/InAsP/InP axial heterostructure nanowire array vertical LEDs-Nanotechnology-25-Sep-2020
article (author version)Ikejiri, Keitaro; Ishizaka, Fumiya; Tomioka, Katsuhiro; Fukui, TakashiGaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE-Nanotechnology-22-Mar-2013
article (author version)Yoshida, Akinobu; Tomioka, Katsuhiro; Ishizaka, Fumiya; Motohisa, JunichiGrowth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy-Journal of Crystal Growth-15-Apr-2017
article (author version)Ishizaka, Fumiya; Hiraya, Yoshihiro; Tomioka, Katsuhiro; Fukui, TakashiGrowth of wurtzite GaP in InP/GaP core-shell nanowires by selective-area MOVPE-Journal of crystal growth-1-Feb-2015
articleYoshimura, Masatoshi; Nakai, Eiji; Tomioka, Katsuhiro; Fukui, TakashiIndium tin oxide and indium phosphide heterojunction nanowire array solar cells-Applied Physics Letters-9-Dec-2013
article (author version)Kohashi, Yoshinori; Sato, Takuya; Ikejiri, Keitaro; Tomioka, Katsuhiro; Hara, Shinjiroh; Motohisa, JunichiInfluence of growth temperature on growth of InGaAs nanowires in selective-area metal-organic vapor-phase epitaxy-Journal of Crystal Growth-1-Jan-2012
articleTomioka, Katsuhiro; Ishizaka, Fumiya; Motohisa, Junichi; Fukui, TakashiInGaAs-InP core-shell nanowire/Si junction for vertical tunnel field-effect transistor-Applied physics letters-21-Sep-2020
proceedings (author version)Yoshioka, Masaharu; Tomioka, Katsuhiro; Hara, Shinjiroh; Fukui, TakashiKnowledge exploratory project for nanodevice design and manufacturing-iiWAS '10 Proceedings of the 12th International Conference on Information Integration and Web-based Applications & Services-2010
articleTomioka, Katsuhiro; Motohisa, Junichi; Fukui, TakashiRational synthesis of atomically thin quantum structures in nanowires based on nucleation processes-Scientific reports-1-Jul-2020
articleTomioka, Katsuhiro; Fukui, TakashiRecent progress in integration of III-V nanowire transistors on Si substrate by selective-area growth-Journal of Physics D: Applied Physics-1-Oct-2014
articleTomioka, Katsuhiro; Motohisa, Junichi; Fukui, TakashiRecent Progress in Vertical Si/III-V Tunnel FETs : From Fundamentals to Current-Boosting Technology-ECS Transactions-Oct-2016
articleYoshida, Akinobu; Tomioka, Katsuhiro; Ishizaka, Fumiya; Chiba, Kohei; Motohisa, JunichiSelective-Area Growth of Vertical InGaAs Nanowires on Ge for Transistor Applications-ECS Transactions-Oct-2016
articleSakuma, Hirotaka; Tomoda, Motonobu; Otsuka, Paul H.; Matsuda, Osamu; Wright, Oliver B.; Fukui, Takashi; Tomioka, Katsuhiro; Veres, Istvan A.Vibrational modes of GaAs hexagonal nanopillar arrays studied with ultrashort optical pulses-Applied Physics Letters-26-Mar-2012
Showing results 1 to 17 of 17


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