| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date |
| article | Yoshida, Akinobu; Gamo, Hironori; Motohisa, Junichi; Tomioka, Katsuhiro | Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germanium | - | Scientific reports | - | 31-Jan-2022 |
| article | Akamatsu, Tomoya; Tomioka, Katsuhiro; Motohisa, Junichi | Demonstration of InP/InAsP/InP axial heterostructure nanowire array vertical LEDs | - | Nanotechnology | - | 25-Sep-2020 |
| article | Tomioka, Katsuhiro; Ishizaka, Fumiya; Motohisa, Junichi; Fukui, Takashi | InGaAs-InP core-shell nanowire/Si junction for vertical tunnel field-effect transistor | - | Applied physics letters | - | 21-Sep-2020 |
| article | Tomioka, Katsuhiro; Motohisa, Junichi; Fukui, Takashi | Rational synthesis of atomically thin quantum structures in nanowires based on nucleation processes | - | Scientific reports | - | 1-Jul-2020 |
| article | Chiba, Kohei; Tomioka, Katsuhiro; Yoshida, Akinobu; Motohisa, Junichi | Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitches on Si platform | - | AIP Advances | - | Dec-2017 |
| article (author version) | Yoshida, Akinobu; Tomioka, Katsuhiro; Ishizaka, Fumiya; Motohisa, Junichi | Growth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy | - | Journal of Crystal Growth | - | 15-Apr-2017 |
| article | Tomioka, Katsuhiro; Motohisa, Junichi; Fukui, Takashi | Recent Progress in Vertical Si/III-V Tunnel FETs : From Fundamentals to Current-Boosting Technology | - | ECS Transactions | - | Oct-2016 |
| article | Yoshida, Akinobu; Tomioka, Katsuhiro; Ishizaka, Fumiya; Chiba, Kohei; Motohisa, Junichi | Selective-Area Growth of Vertical InGaAs Nanowires on Ge for Transistor Applications | - | ECS Transactions | - | Oct-2016 |
| proceedings (author version) | Tomioka, Katsuhiro; Motohisa, Junichi; Fukui, Takashi | Advances in Steep-Slope Tunnel FETs | - | - | - | Sep-2016 |
| article (author version) | Ishizaka, Fumiya; Hiraya, Yoshihiro; Tomioka, Katsuhiro; Fukui, Takashi | Growth of wurtzite GaP in InP/GaP core-shell nanowires by selective-area MOVPE | - | Journal of crystal growth | - | 1-Feb-2015 |
| article | Tomioka, Katsuhiro; Fukui, Takashi | Recent progress in integration of III-V nanowire transistors on Si substrate by selective-area growth | - | Journal of Physics D: Applied Physics | - | 1-Oct-2014 |
| article | Tomioka, Katsuhiro; Fukui, Takashi | Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length | - | Applied Physics Letters | - | 19-Feb-2014 |
| article | Yoshimura, Masatoshi; Nakai, Eiji; Tomioka, Katsuhiro; Fukui, Takashi | Indium tin oxide and indium phosphide heterojunction nanowire array solar cells | - | Applied Physics Letters | - | 9-Dec-2013 |
| article (author version) | Ikejiri, Keitaro; Ishizaka, Fumiya; Tomioka, Katsuhiro; Fukui, Takashi | GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE | - | Nanotechnology | - | 22-Mar-2013 |
| article | Sakuma, Hirotaka; Tomoda, Motonobu; Otsuka, Paul H.; Matsuda, Osamu; Wright, Oliver B.; Fukui, Takashi; Tomioka, Katsuhiro; Veres, Istvan A. | Vibrational modes of GaAs hexagonal nanopillar arrays studied with ultrashort optical pulses | - | Applied Physics Letters | - | 26-Mar-2012 |
| article (author version) | Kohashi, Yoshinori; Sato, Takuya; Ikejiri, Keitaro; Tomioka, Katsuhiro; Hara, Shinjiroh; Motohisa, Junichi | Influence of growth temperature on growth of InGaAs nanowires in selective-area metal-organic vapor-phase epitaxy | - | Journal of Crystal Growth | - | 1-Jan-2012 |
| proceedings (author version) | Yoshioka, Masaharu; Tomioka, Katsuhiro; Hara, Shinjiroh; Fukui, Takashi | Knowledge exploratory project for nanodevice design and manufacturing | - | iiWAS '10 Proceedings of the 12th International Conference on Information Integration and Web-based Applications & Services | - | 2010 |
